Erratum: “Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy” [Appl. Phys. Lett. 119, 152102 (2021)]
2021 ◽
Vol 119
(20)
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pp. 209901
Kazuki Ohnishi
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Seiya Kawasaki
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Naoki Fujimoto
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Shugo Nitta
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Hirotaka Watanabe
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...
2021 ◽
Vol 119
(15)
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pp. 152102
Kazuki Ohnishi
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Seiya Kawasaki
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Naoki Fujimoto
◽
Shugo Nitta
◽
Hirotaka Watanabe
◽
...
2019 ◽
Vol 53
(15)
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pp. 2007-2011
Wondwosen Metaferia
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Kevin L. Schulte
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John Simon
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Steve Johnston
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Aaron J. Ptak
2004 ◽
Vol 43
(2)
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pp. 534-535
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Hiroki Sugiyama
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Haruki Yokoyama
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Takashi Kobayashi
2002 ◽
Vol 14
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pp. 991-993
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H.-M. Kim
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D.S. Kim
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Y.S. Park
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D.Y. Kim
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T.W. Kang
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...
Wondwosen Metaferia
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Anna K. Braun
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John Simon
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Corinne E. Packard
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Aaron J. Ptak
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...
2021 ◽
Vol 544
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pp. 148773
Peng Lin
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Nannan Niu
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Ran Zuo
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Yulong Fang
◽
Zhihong Feng
1993 ◽
Vol 63
(14)
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pp. 1960-1962
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Ricardo Basco
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Farid Agahi
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Kei May Lau
Shiyu Xiao
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Kanako Shojiki
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Hideto Miyake