Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

ABSTRACTFor the purpose of clarifying the growth mechanism of GaN metal-organic vapor phase epitaxy (MOVPE), the GaN surface during the growth on the (0001) sapphire substrate were in-situ monitored by surface photo-absorption (SPA) method. Ga-rich and N-rich surfaces can be distinguished by their reflectivities. It is found that the surface stoichiometry changes with the substrate temperature and with the carrier gas. In the nitrogen carrier gas, a N-rich GaN surface is stably formed at temperatures up to about 1000°C under NH3 flow. In contrast, the surface in H2 carrier gas is N-rich below 720°C, but becomes Ga-rich above 850°C. The desorption kinetics indicates that H2 enhances the N desorption.

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Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine

MRS Proceedings ◽

10.1557/proc-595-f99w3.43 ◽

1999 ◽

Vol 595 ◽

Author(s):

T. Schmidtling ◽

M. Klein ◽

U.W. Pohl ◽

W. Richter

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Growth Temperature ◽

Room Temperature ◽

Vapor Phase Epitaxy ◽

Structural Quality ◽

Organic Vapor ◽

Metal Organic ◽

Nitrogen Contents ◽

Room Temperature Luminescence

AbstractGaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.

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Metal organic vapor phase epitaxy of GaAsN/GaAs Quantum wells using Tertiarybutylhydrazine

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004324 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 230-237 ◽

Cited By ~ 1

Author(s):

T. Schmidtling ◽

M. Klein ◽

U.W. Pohl ◽

W. Richter

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Growth Temperature ◽

Room Temperature ◽

Vapor Phase Epitaxy ◽

Structural Quality ◽

Organic Vapor ◽

Metal Organic ◽

Nitrogen Contents ◽

Room Temperature Luminescence

GaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.

Download Full-text