The Influences of the Hyperbolic Two-Temperatures Theory on Waves Propagation in a Semiconductor Material Containing Spherical Cavity

This article focuses on the study of redial displacement, the carrier density, the conductive and thermodynamic temperatures and the stresses in a semiconductor medium with a spherical hole. This study deals with photo-thermoelastic interactions in a semiconductor material containing a spherical cavity. The new hyperbolic theory of two temperatures with one-time delay is used. The internal surface of the cavity is constrained and the density of carriers is photogenerated by a heat flux at the exponentially decreasing pulse boundaries. The analytical solutions by the eigenvalues approach under the Laplace transformation approaches are used to obtain the solution of the problem and the inversion of the Laplace transformations is performed numerically. Numerical results for semiconductor materials are presented graphically and discussed to show the variations of physical quantities under the present model.

Uniformity of working processes of jet and vortex ejectors, vortex tube and Hartmann–Sprenger pipe

Based on the previously considered physical and mathematical models of jet and vortex ejectors, vortex tube and Hartmann–Sprenger tube, it makes a conclusion about the identity of the processes of exchange of work and heat in these devices. The influence of viscosity, tangential stresses, and the gradient of linear and angular velocities on the transfer of kinetic energy from a high-pressure to a low-pressure gas is shown. The difference of thermodynamic temperatures for heat exchange of high-pressure and low-pressure gases is taken into account.