Theoretical aspects of direct conversion of radio-chemical energy in electric by radiation-stimulated SiC*/Si heterostructure
2022 ◽
Vol 2155
(1)
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pp. 012014
Keyword(s):
Abstract The authors consider their own CVD technology for the SiC growing on a Si substrate in order to create a beta converter. Since the beta converter contains a heavy C-14 atom, the finished beta converter works as an ”inner sun”, and the structure has specific mark * in the name: SiC*/Si. Authors focus on the problems of the theoretical description of: 1) the growth of the SiC*/Si film (with C-14 atoms inside) and the position of the p-n junction in the doping process; 2) method of a placement radioisotopes into a semiconductor material; 3) physical properties of radioisotopes; 4) defects formation; 5) generation of secondary electrons in the region of the p-n junction.
2019 ◽
Vol 522
◽
pp. 110-116
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2017 ◽
Vol 4
(8)
◽
pp. 086414
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1984 ◽
Vol 42
◽
pp. 356-357
Keyword(s):
1978 ◽
Vol 5
(1)
◽
pp. 134-141
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