scholarly journals The Influences of the Hyperbolic Two-Temperatures Theory on Waves Propagation in a Semiconductor Material Containing Spherical Cavity

Mathematics ◽  
2022 ◽  
Vol 10 (1) ◽  
pp. 121
Author(s):  
Aatef Hobiny ◽  
Ibrahim Abbas ◽  
Marin Marin
Keyword(s):  
Spherical Cavity ◽  
Present Model ◽  
Internal Surface ◽  
Semiconductor Material ◽  
Semiconductor Materials ◽  
Two Temperatures ◽  
Waves Propagation ◽  
Thermodynamic Temperatures ◽  
Laplace Transformations ◽  
Physical Quantities

This article focuses on the study of redial displacement, the carrier density, the conductive and thermodynamic temperatures and the stresses in a semiconductor medium with a spherical hole. This study deals with photo-thermoelastic interactions in a semiconductor material containing a spherical cavity. The new hyperbolic theory of two temperatures with one-time delay is used. The internal surface of the cavity is constrained and the density of carriers is photogenerated by a heat flux at the exponentially decreasing pulse boundaries. The analytical solutions by the eigenvalues approach under the Laplace transformation approaches are used to obtain the solution of the problem and the inversion of the Laplace transformations is performed numerically. Numerical results for semiconductor materials are presented graphically and discussed to show the variations of physical quantities under the present model.

scholarly journals Mechanics and thermal management of stretchable inorganic electronics

2015 ◽  
Vol 3 (1) ◽  
pp. 128-143 ◽  
Author(s):  
Jizhou Song ◽  
Xue Feng ◽  
Yonggang Huang
Keyword(s):  
Thermal Management ◽  
Design Guidelines ◽  
Semiconductor Material ◽  
Semiconductor Materials ◽  
Stretchable Electronics ◽  
Wearable Electronics ◽  
Effective Strategy ◽  
Thermal Models ◽  
Inorganic Semiconductor ◽  
Novel Applications

Abstract Stretchable electronics enables lots of novel applications ranging from wearable electronics, curvilinear electronics to bio-integrated therapeutic devices that are not possible through conventional electronics that is rigid and flat in nature. One effective strategy to realize stretchable electronics exploits the design of inorganic semiconductor material in a stretchable format on an elastomeric substrate. In this review, we summarize the advances in mechanics and thermal management of stretchable electronics based on inorganic semiconductor materials. The mechanics and thermal models are very helpful in understanding the underlying physics associated with these systems, and they also provide design guidelines for the development of stretchable inorganic electronics.

Effect of rotation on micropolar generalized thermoelasticity with two temperatures using a dual-phase lag model

2014 ◽  
Vol 92 (2) ◽  
pp. 149-158 ◽  
Author(s):  
Mohamed I.A. Othman ◽  
W.M. Hasona ◽  
Elsayed M. Abd-Elaziz
Keyword(s):  
Numerical Solutions ◽  
Generalized Thermoelasticity ◽  
Thermodynamic Temperature ◽  
Phase Lag ◽  
Dual Phase ◽  
Conductive Temperature ◽  
Mode Method ◽  
Lag Model ◽  
Two Temperatures ◽  
Physical Quantities

In the present paper, we introduce the dual-phase lag theory to study the effect of the rotation on a two-dimensional problem of micropolar thermoelastic isotropic medium with two temperatures. A normal mode method is proposed to analyze the problem and obtain numerical solutions for the displacement, the conductive temperature, the thermodynamic temperature, the microrotation, and the stresses. The results of the physical quantities have been obtained numerically and illustrated graphically. The results show the effect of phase lag of the heat flux τq, a phase lag of temperature gradient τθ and two-temperature parameter on all the physical quantities.

scholarly journals Photo-Thermal Interactions in a Semiconducting Media with a Spherical Cavity under Hyperbolic Two-Temperature Model

Mathematics ◽  
2020 ◽  
Vol 8 (4) ◽  
pp. 585 ◽  
Author(s):  
Faris S. Alzahrani ◽  
Ibrahim A. Abbas
Keyword(s):  
Spherical Cavity ◽  
Carrier Density ◽  
Mathematical Problem ◽  
Temperature Model ◽  
Mechanical Wave ◽  
Finite Speed ◽  
Inner Surface ◽  
Thermoelastic Interaction ◽  
Laplace Transformations ◽  
Two Temperature

This article highlights the study of photo-thermoelastic interaction in an unbounded semiconductor medium containing a spherical cavity. This problem is solved using the new hyperbolic two-temperature model. The bounding surface of the cavity is traction free and loaded thermally by exponentially decaying pulse boundary heat flux. In addition, the carrier density is prescribed on the inner surface of the cavity in terms of the recombination speed. The techniques of Laplace transforms are used to get the analytical solutions of the problem in the transformed domain by the eigenvalues method. The inversions of Laplace transformations have been carried out numerically. The outcomes also display that the analytical schemes can overcome the mathematical problem to analyze this problem. Numerical outcomes for a semiconductor material are performed and demonstrated graphically. According to the numerical results, this new hyperbolic two-temperature model of thermoelasticity offers finite speed of the thermal wave and mechanical wave propagation.

Approximate Direct and Inverse Relationships for Thermal and Stress States in Thick-Walled Vessels Under Thermal Shock

2006 ◽  
Vol 129 (1) ◽  
pp. 52-57 ◽  
Author(s):  
A. E. Segall ◽  
R. Akarapu
Keyword(s):  
Finite Element ◽  
Thermal Shock ◽  
Thermal Loading ◽  
Thermoelastic Stress ◽  
Internal Surface ◽  
Approximate Solutions ◽  
Stress Distributions ◽  
Starting Point ◽  
Laplace Transformations ◽  
Stress States

Approximate solutions were derived for the transient through steady-state thermal-stress fields developed in thick-walled vessels subjected to a potentially arbitrary thermal shock. In order to accomplish this, Duhamel’s integral was first used to relate the arbitrary thermal loading to a previously derived unit kernel for tubular geometries. Approximate rules for direct and inverse Laplace transformations were then used to modify the resulting Volterra equation to an algebraically solvable and relatively simple form. The desired thermoelastic stress distributions were then determined using the calculated thermal states and elasticity theory. Good agreement was seen between the derived temperature and stress relationships and earlier analytical and finite-element studies of a cylinder subjected to an asymptotic exponential heating on the internal surface with convection to the outer environment. It was also demonstrated that the derived relationships can be used to approximate the more difficult inverse (deconvolution) thermal problem for both exponential (monotonic) and triangular (non-monotonic) load histories. The use of polynomial of powers tn∕2 demonstrated the feasibility of employing the method with empirical data that may not be easily represented by standard functions. For any of the direct and inverse cases explored, the resulting relationships can be used to verify, calibrate, and/or determine a starting point for finite-element or other numerical methods.

scholarly journals Tunnelling Effect for Quadruples Potential Using Matrix Propagation Method

2020 ◽  
Vol 3 (2) ◽  
pp. 66
Author(s):  
Chilwatun Nasiroh ◽  
Bambang Supriadi ◽  
Rif'ati Dina Handayani
Keyword(s):  
Transmission Coefficient ◽  
Semiconductor Material ◽  
Material Composition ◽  
Semiconductor Materials ◽  
Potential Barriers ◽  
A Value ◽  
Tunnelling Effect ◽  
Potential Structure ◽  
Tunnelling Effects

Semiconductor materials can be used as potential barriers to Tunnelling effects. In this study, four semiconductor materials are arranged in various ways to form a quadruple potential structure to analyze the value of the transmission coefficient. The analysis was conducted using the analytical and numerical matrix propagation method using Matlab2018a. The results confirmed that the inverted arrangement produces the same transmission coefficient value for each energy. So that there are 12 kinds of transmission coefficient values generated from 24 arrangements. The semiconductor material composition with the most considerable transmission coefficient value is ADCB and BCDA, which have a value of 0.8087. The variation of the arrangement affects the value of the transmission coefficient so that it can be used as a guideline for selecting the arrangement that produces the most optimum value of the transmission coefficient from various possible arrangements.

scholarly journals Modelling phase transition in metastable liquids: application to cavitating and flashing flows

2008 ◽  
Vol 607 ◽  
pp. 313-350 ◽  
Author(s):  
RICHARD SAUREL ◽  
FABIEN PETITPAS ◽  
REMI ABGRALL
Keyword(s):  
Present Model ◽  
Chemical Potential ◽  
Equations Of State ◽  
Normal Velocity ◽  
Two Phase ◽  
Chemical Relaxation ◽  
Order Of Magnitude ◽  
Two Temperatures ◽  
Simple Contact ◽  
Transition Fronts

A hyperbolic two-phase flow model involving five partial differential equations is constructed for liquid–gas interface modelling. The model is able to deal with interfaces of simple contact where normal velocity and pressure are continuous as well as transition fronts where heat and mass transfer occur, involving pressure and velocity jumps. These fronts correspond to extra waves in the system. The model involves two temperatures and entropies but a single pressure and a single velocity. The closure is achieved by two equations of state that reproduce the phase diagram when equilibrium is reached. Relaxation toward equilibrium is achieved by temperature and chemical potential relaxation terms whose kinetics is considered infinitely fast at specific locations only, typically at evaporation fronts. Thus, metastable states are involved for locations far from these fronts. Computational results are compared to the experimental ones. Computed and measured front speeds are of the same order of magnitude and the same tendency of increasing front speed with initial temperature is reported. Moreover, the limit case of evaporation fronts propagating in highly metastable liquids with the Chapman–Jouguet speed is recovered as an expansion wave of the present model in the limit of stiff thermal and chemical relaxation.

Reduced graphene oxide modified TiO2 semiconductor materials for dye-sensitized solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (103) ◽  
pp. 100866-100875 ◽  
Author(s):  
Liguo Wei ◽  
Shishan Chen ◽  
Yulin Yang ◽  
Yongli Dong ◽  
Weina Song ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Solar Cells ◽  
Reduced Graphene Oxide ◽  
Dye Sensitized Solar Cells ◽  
Semiconductor Material ◽  
Semiconductor Materials ◽  
Optimal Amount ◽  
Dye Sensitized ◽  
Reduced Graphene ◽  
Sensitized Solar Cells

An optimal amount of rGO modified TiO2 semiconductor material could enhance the efficiency of DSSCs.

scholarly journals Magneto-photo-thermoelastic Interactions in a Semiconductor Solid Cylinder Due to a Periodic Decaying Varying Heat

2021 ◽  
Author(s):  
A. E. Abouelregal ◽  
Ashraf M. Zenkour
Keyword(s):  
Magnetic Field ◽  
Relaxation Time ◽  
Numerical Method ◽  
Axial Magnetic Field ◽  
Solid Cylinder ◽  
Thermoelastic Model ◽  
Phase Lags ◽  
Analytical Formulas ◽  
Laplace Transformations ◽  
Physical Quantities

Abstract In this article, a generalized photo-thermoelastic model with relaxation time (GPTE) was introduced and applied to an infinite semiconductor body in the form of a solid cylinder. The cylinder and its adjoining vacuum are constrained exposed to periodic decaying varying heat and subjected to a uniform axial magnetic field. Analytical formulas of the physical quantities of the problem were obtained using Laplace transformations. A numerical method is used to find the inverse Laplace transforms. The effect of phase-lags, the temperature frequency on the derived expressions have been illustrated graphically and discussed.

scholarly journals The Effect of Hyperbolic Two-temperatures Model on Waves Propagation in a Semi-conductor Medium Containing Spherical Cavities

2021 ◽  
Author(s):  
Ibrahim Abbas ◽  
Aatef Hobiny
Keyword(s):  
Laplace Transform ◽  
Carrier Density ◽  
Thermodynamic Temperature ◽  
Conductive Temperature ◽  
Elastic Interactions ◽  
Spherical Cavities ◽  
Laplace Transform Technique ◽  
The Laplace Transform ◽  
Two Temperatures ◽  
Waves Propagation

Abstract This article is interested in the study of the carrier density, the redial displacement, the conductive temperature, thermodynamic temperature and the stresses in a semi-conductor material containing a spherical hole. This investigation deals with the photo-thermo-elastic interactions in a semi-conductor medium in the context of the new hyperbolic two-temperatures model with one relaxation time. The Laplace transform technique are used to obtain the problem analytical solution by the eigenvalues methods and the inversions of the Laplace transform were performed numerically. Numerical results for semi-conductor materials are shown graphically and discussed.

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