Conductance peaks and gaps in single-electron device with the presence of electron-electron interaction - “Nonequilibrium green function approach”

Consider a single-electron transistor (SET) with a small size quantum dot (QD), where confined energy and the Coulomb interaction control the charges adding to QD. In this paper, a theoretical analysis of the relation between source-drain voltage and gate voltage has been done to define quantum-Coulomb blocked (and unblocked) diamonds for QD that has N electrons. An analytical equation for the conductance has been derived using the non-equilibrium Green function technique (NEGFT). Further, the effect of QD size and the tunnelling rate on conductance peaks and gaps have been investigated. Finally, the effect of gate voltage on conductance peaks and gaps with respect the quantum-Coulomb blocked regions has been analysed.

Research on Human-Computer Interaction Control Method in the Background of Internet of Things

Against the background of the growing development of the Internet of Things, this article conducts research on more efficient methods for controlling the interconnection of all things, and proposes that smart devices use the same operating platform, and the human-computer interface presents universal modular controls for manipulation, it can satisfy the requirement that one device controls several different types of controlled device simultaneously. At the same time, the interactive method uses the controlled device to actively submit control content to the control device, and discusses the human-computer interactive control method applicable to the Internet of Everything, and strives to achieve a convenient and easy-to-use human-computer control experience.