scholarly journals Conductance peaks and gaps in single-electron device with the presence of electron-electron interaction - “Nonequilibrium green function approach”

2021 ◽  
Author(s):  
Ali Moulhim ◽  
Brijesh Tripathi ◽  
Manoj Kumar
Keyword(s):  
Green Function ◽  
Gate Voltage ◽  
Single Electron ◽  
Function Technique ◽  
Electron Interaction ◽  
Single Electron Transistor ◽  
Interaction Control ◽  
Nonequilibrium Green Function ◽  
Single Electron Device ◽  
Green Function Approach

Consider a single-electron transistor (SET) with a small size quantum dot (QD), where confined energy and the Coulomb interaction control the charges adding to QD. In this paper, a theoretical analysis of the relation between source-drain voltage and gate voltage has been done to define quantum-Coulomb blocked (and unblocked) diamonds for QD that has N electrons. An analytical equation for the conductance has been derived using the non-equilibrium Green function technique (NEGFT). Further, the effect of QD size and the tunnelling rate on conductance peaks and gaps have been investigated. Finally, the effect of gate voltage on conductance peaks and gaps with respect the quantum-Coulomb blocked regions has been analysed.

scholarly journals Measuring of an unknown voltage by using single electron transistor based voltmeter

2021 ◽  
Vol 24 (3) ◽  
pp. 277-287
Author(s):  
A.K. Biswas ◽  
Keyword(s):  
Low Power ◽  
Large Scale ◽  
Low Noise ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Flip Flop ◽  
Ultra Low Power ◽  
Integration Density ◽  
Single Electron Device ◽  
Ultra Low Noise

In engineering and science, high operating speed, low power consumption, and high integration density equipment are financially indispensable. Single electron device (SED) is one such equipment. SEDs are capable of controlling the transport of only one electron through the tunneling transistor. It is single electron that is sufficient to store information in SED. Power consumed in the single electron circuit is very low in comparison with CMOS circuits. The processing speed of single electron transistor (SET) based device will be nearly close to electronic speed. SET attracts the researchers, scientists or technologists to design and implement large scale circuits for the sake of the consumption of ultra-low power and its small size. All the incidences for the case of a SET-based circuit happen when only a single electron tunnels through the transistors under the proper applied bias voltage and a small gate voltage or multiple gate voltages. For implementing a single electron transistor based voltmeter circuit, SET would be the best candidate to fulfil the requirements of it. Ultra-low noise is generated during tunneling SEDs. A D Flip-Flop is implemented and based on this, two kinds of registers like sequence register and сode register are made.

scholarly journals Finding out square root of an integer number using Single Electron Transistor

2021 ◽  
pp. 96-110
Author(s):  
Dr. Anup Kumar Biswas
Keyword(s):  
Power Consumption ◽  
Gate Voltage ◽  
Large Scale ◽  
Complementary Metal Oxide Semiconductor ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Integer Number ◽  
Single Electron Transistor ◽  
Square Root ◽  
Ultra Low Power

The single-electron transistor (SET) attracts the researchers, scientists or technologists to design and construct large scale circuits for the sake of the consumption of ultra-low power and its small size. All the incidences in a SET-based circuit happen when only a single electron tunnels through the transistors under the proper applied bias voltage and a small gate voltage or multiple gate voltages. The oscillatory conduction as the function of the variable-multiple /single gate voltage is exhibited by SET. This uncommon characteristic provides the ability of executing the functions of AND, OR, XOR, Inverter and some combinational circuits like multiplexer, subtractor etc. For implementing a square root circuit, SET would be a best candidate to fulfil the requirements. The processing speed of SET based devices will be nearly close to electronic speed. Noise during processing gets ultra-low when the circuits is built with SETs. The square root circuit is presented here for sixteen bit input numbers. The input bit numbers can be increased with the increasing of the depth of the pattern very easily. And this will provide us the greater accuracy about the squared root value. Power consumption in the single electron circuit is low irrespective of bipolar junction transistor (BJT) or Complementary Metal Oxide Semiconductor (CMOS) circuits. Reducing the numbers of nodes, the power consumption is reduced.

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