Existence and static stability of a capillary free surface appearing in a dewetted Bridgman process. Part II.

This paper presents six theoretical results concerning the existence and static stability of a capillary free surface appearing in a dewetted Bridgman crystal growth technique. The results are obtained in an axis-symmetric 2D model for semiconductors for which 𝜃𝜃𝑐𝑐+𝛼𝛼𝑒𝑒>𝜋𝜋 (where:𝜃𝜃𝑐𝑐- wetting angle and 𝛼𝛼𝑒𝑒- growth angle). Numerical results are presented in case of GaSb semiconductor growth. The reported results can help, the practical crystal growers, in better understanding the dependence of the free surface shape and size on the pressure difference across the free surface and the right choice of crystal size, pressure difference and thermal conditions for the growth process.

Existence and static stability of a capillary free surface appearing in a dewetted Bridgman process. Part I.

This paper presents six theoretical results concerning the existence and static stability of a capillary free surface appearing in a dewetted Bridgman crystal growth technique. The results are obtained in an axis-symmetric 2D model for semiconductors for which 𝜃𝜃𝑐𝑐+𝛼𝛼𝑒𝑒<𝜋𝜋 (where:𝜃𝜃𝑐𝑐- wetting angle and 𝛼𝛼𝑒𝑒- growth angle). Numerical results are presented in case of InSb semiconductor growth. The reported results can help, the practical crystal growers, in better understanding the dependence of the free surface shape and size on the pressure difference across the free surface and prepare the appropriate seed size, and thermal conditions before seeding the growth process.