Damage-free hydrogenation of graphene via ion energy control in plasma

We proposed appropriate plasma conditions for hydrogenation of graphene without structural defect formation using ion energy analysis. Graphene sheets were exposed to plasma having H3+ ions with energies of 3.45, 5.35, and 7.45 eV. Only the specimen treated by the plasma with the lowest energy was converted back to graphene by thermal annealing, and the others showed irreversible characteristics because of the vacancy defects generated by high-energy ions. Finally, we demonstrated the reversible characteristic in graphene field-effect transistor using the plasma with appropriate ion energy and Joule heating, indicating that damage induced by plasma was negligible.

Modeling of healing pores of cylindrical form under the action of shock waves in a crystal subjected to shear deformation

Volumetric defects in crystals worsen operational properties of structural materials; therefore, the problem of reducing discontinuities in solid is one of the most important in modern materials science. In the present work, the results of computer simulation are presented that demonstrate possibility of collapse of pores in a crystal in state of shear deformation under the influence of shock waves. Similar waves can occur in a solid under external high-intensity exposure. For example, in the zone of propagation of displacement cascade, there are regions in which occurs a mismatch between the thermalization times of atomic vibrations and the removal of heat from them. As a result of the expansion of such a region, a shock after cascade wave arises. The simulation was carried out based on molecular dynamics method using the potential calculated by means of mmersed atom method. As a bulk defect, we considered extended pores of cylindrical shape, which can be formed after passing of high-energy ions through a crystal, or, for example, when superheated closed fluid inclusions (mother liquor) reach the surface. The study has shown that such defects are the source of heterogeneous nucleation of dislocation loops, contributing to a decrease in the shear stresses in simulated structure. Dependences of the average dislocation density on the shear angle and temperature of the designed cell were established, and the loop growth rate was estimated. Generated shock waves create additional tangential stresses that contribute to the formation of dislocation loops; therefore, in this case, dislocations are observed even with a small shear strain. If during simulation the thermal effect increases, the pore collapses.

Accurate spectra for high energy ions by advanced time-of-flight diamond-detector schemes in experiments with high energy and intensity lasers

Time-Of-Flight (TOF) methods are very effective to detect particles accelerated in laser-plasma interactions, but they show significant limitations when used in experiments with high energy and intensity lasers, where both high-energy ions and remarkable levels of ElectroMagnetic Pulses (EMPs) in the radiofrequency-microwave range are generated. Here we describe a novel advanced diagnostic method for the characterization of protons accelerated by intense matter interactions with high-energy and high-intensity ultra-short laser pulses up to the femtosecond and even future attosecond range. The method employs a stacked diamond detector structure and the TOF technique, featuring high sensitivity, high resolution, high radiation hardness and high signal-to-noise ratio in environments heavily affected by remarkable EMP fields. A detailed study on the use, the optimization and the properties of a single module of the stack is here described for an experiment where a fast diamond detector is employed in an highly EMP-polluted environment. Accurate calibrated spectra of accelerated protons are presented from an experiment with the femtosecond Flame laser (beyond 100 TW power and ~ 1019 W/cm2 intensity) interacting with thin foil targets. The results can be readily applied to the case of complex stack configurations and to more general experimental conditions.

Hall Study of Conductive Channels Formed in Germanium by Beams of High-Energy Light Ions

The implantation of the high-energy ions of H+ or He+ in germanium leads to the creation of buried conductive channels in its bulk with equal concentrations of acceptor centers. These centers are the structure defects of the crystal lattice which arise in the course of deceleration of high-energy particles. This method of introducing electrically active defects is similar to the doping of semiconductors by acceptor-type impurities. It has been established that the density of defects increases with the implantation dose till ≈5×10^15 cm−2. The further increase of the implantation dose does not affect the level of doping. In the range of applied doses (10^12–6×10^16) cm−2, the Hall mobility of holes in the formed conducting channels is practically independent of the implanted dose and is about (2-3)×10^4 cm2/Vs at 77 K. The doping ofthe germanium by high-energy ions of H+ or He+ to obtain conducting regions with high hole mobility can be used in the microelectronics technology.

Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

Damaged regions of cylindrical shapes called ion tracks, typically in nano-meters wide and tens micro-meters long, are formed along the ion trajectories in many insulators, when high energy ions in the electronic stopping regime are injected. In most cases, the ion tracks were assumed as consequences of dense electronic energy deposition from the high energy ions, except some cases where the synergy effect with the nuclear energy deposition plays an important role. In crystalline Si (c-Si), no tracks have been observed with any monomer ions up to GeV. Tracks are formed in c-Si under 40 MeV fullerene (C60) cluster ion irradiation, which provides much higher energy deposition than monomer ions. The track diameter decreases with decreasing the ion energy until they disappear at an extrapolated value of ~ 17 MeV. However, here we report the track formation of 10 nm in diameter under C60 ion irradiation of 6 MeV, i.e., much lower than the extrapolated threshold. The diameters of 10 nm were comparable to those under 40 MeV C60 irradiation. Furthermore, the tracks formed by 6 MeV C60 irradiation consisted of damaged crystalline, while those formed by 40 MeV C60 irradiation were amorphous. The track formation was observed down to 1 MeV and probably lower with decreasing the track diameters. The track lengths were much shorter than those expected from the drop of Se below the threshold. These track formations at such low energies cannot be explained by the conventional purely electronic energy deposition mechanism, indicating another origin, e.g., the synergy effect between the electronic and nuclear energy depositions, or dual transitions of transient melting and boiling.