Theory and modelling of spin-transfer-torque based electronic devices

2019 ◽  
pp. 211-232
Keyword(s):  
Electronic Devices ◽  
Spin Transfer Torque ◽  
Spin Transfer

Introduction of spin torques

2017 ◽  
Author(s):  
T. Kimura
Keyword(s):  
Angular Momentum ◽  
Giant Magnetoresistance ◽  
Spontaneous Magnetization ◽  
Magnetic Domain ◽  
Magnetic Multilayers ◽  
Transfer Effect ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Angular Momentum ◽  
Spin Torques

This chapter discusses the spin-transfer effect, which is described as the transfer of the spin angular momentum between the conduction electrons and the magnetization of the ferromagnet that occurs due to the conservation of the spin angular momentum. L. Berger, who introduced the concept in 1984, considered the exchange interaction between the conduction electron and the localized magnetic moment, and predicted that a magnetic domain wall can be moved by flowing the spin current. The spin-transfer effect was brought into the limelight by the progress in microfabrication techniques and the discovery of the giant magnetoresistance effect in magnetic multilayers. Berger, at the same time, separately studied the spin-transfer torque in a system similar to Slonczewski’s magnetic multilayered system and predicted spontaneous magnetization precession.

Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

2021 ◽  
Vol 118 (9) ◽  
pp. 092406
Author(s):  
Chaoliang Zhang ◽  
Yutaro Takeuchi ◽  
Shunsuke Fukami ◽  
Hideo Ohno
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Orbit ◽  
Magnetization Switching

scholarly journals Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1229
Author(s):  
Andrii Vovk ◽  
Sergey A. Bunyaev ◽  
Pavel Štrichovanec ◽  
Nikolay R. Vovk ◽  
Bogdan Postolnyi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Post Deposition Annealing ◽  
Structure Variation ◽  
Annealing Temperatures ◽  
Damping Parameter ◽  
Soft Ferromagnetic ◽  
Thin Polycrystalline ◽  
Post Deposition

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review

SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740014 ◽  
Author(s):  
Cormac Ó Coileáin ◽  
Han Chun Wu
Keyword(s):  
Magnetic Fields ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Tetragonal Structure ◽  
Next Generation ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Concise Review ◽  
Plane Anisotropy ◽  
Magnetic States

From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.

Magnetization dynamics of antiferromagnetic metals of PtMn and IrMn driven by a pulsed spin-transfer torque

2021 ◽  
Vol 118 (25) ◽  
pp. 252407
Author(s):  
Kyuhwe Kang ◽  
Won-Bin Lee ◽  
Dong-Kyu Lee ◽  
Kyung-Jin Lee ◽  
Gyung-Min Choi
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetization Dynamics

A survey of in-spin transfer torque MRAM computing

2021 ◽  
Vol 64 (6) ◽  
Author(s):  
Hao Cai ◽  
Bo Liu ◽  
Juntong Chen ◽  
Lirida Naviner ◽  
Yongliang Zhou ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer

Spin-transfer torque in magnetic junctions with ferromagnetic insulators

2012 ◽  
Vol 111 (7) ◽  
pp. 07C902 ◽  
Author(s):  
Jun-ichiro Inoue
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer

Impact of MgO Thickness on the Performance of Spin-Transfer Torque Nano-Oscillators

2015 ◽  
Vol 51 (11) ◽  
pp. 1-4 ◽  
Author(s):  
J. D. Costa ◽  
S. Serrano-Guisan ◽  
J. Borme ◽  
F. L. Deepak ◽  
M. Tarequzzaman ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer
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