Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs

2002 ◽  
Author(s):  
M. Borgarino ◽  
J.G. Tartarin ◽  
S. Delage ◽  
R. Plana ◽  
F. Fantini ◽  
...  
Keyword(s):  
Surface Quality ◽  
Base Surface ◽  
Extrinsic Base

Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1500-L1502 ◽  
Author(s):  
Hiroshi Ito ◽  
Osaake Nakajima ◽  
Koichi Nagata ◽  
Takashi Makimura ◽  
Tadao Ishibashi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Base Surface ◽  
Recombination Current ◽  
Extrinsic Base

Extrinsic Base Surface Passivation in High Speed “Type-II" GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure

2010 ◽  
Vol 27 (5) ◽  
pp. 058502 ◽  
Author(s):  
Liu Hong-Gang ◽  
Jin Zhi ◽  
Su Yong-Bo ◽  
Wang Xian-Tai ◽  
Chang Hu-Dong ◽  
...  
Keyword(s):  
High Speed ◽  
Surface Passivation ◽  
Type Ii ◽  
Base Surface ◽  
Extrinsic Base

Extrinsic base surface-passivated dual-emitter heterojunction phototransistors

2006 ◽  
Vol 40 (1) ◽  
pp. 45-55 ◽  
Author(s):  
Wei-Tien Chen ◽  
Hon-Rung Chen ◽  
Meng-Kai Hsu ◽  
Shao-Yen Chiu ◽  
Wen-Shiung Lour
Keyword(s):  
Base Surface ◽  
Extrinsic Base

The specification of surface quality—quo vadis?

1972 ◽  
Vol 51 (5) ◽  
pp. 171 ◽  
Author(s):  
J. Halling
Keyword(s):  
Surface Quality ◽  
Quo Vadis
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