Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
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Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOS VCOs

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042888 ◽

2003 ◽

Cited By ~ 3

Author(s):

D.Y.C. Lie ◽

X. Yuan ◽

L.E. Larson ◽

T. Robinson ◽

A. Senior ◽

...

Keyword(s):

Phase Noise ◽

Noise Analysis ◽

Fully Integrated ◽

Sige Bicmos

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Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042891 ◽

2003 ◽

Cited By ~ 6

Author(s):

D.C. Ahlgren ◽

B. Jagannathan ◽

S.-J. Jeng ◽

P. Smith ◽

D. Angell ◽

...

Keyword(s):

Process Variability ◽

Sige Hbt ◽

Variability Analysis

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An integrated SiGe transmitter circuit for 24 GHz radar sensors

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042920 ◽

2003 ◽

Cited By ~ 4

Author(s):

P. Wennekers ◽

A. Ghazionour ◽

R. Reuter

Keyword(s):

Radar Sensors ◽

24 Ghz

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A 5 GHz radio front-end with automatically Q tuned notch filter

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042889 ◽

2003 ◽

Cited By ~ 4

Author(s):

J.W.M. Rogers ◽

C. Plett

Keyword(s):

Notch Filter ◽

Front End ◽

5 Ghz

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190-GHz f/sub T/, 130-GHz f/sub max/ SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042904 ◽

2003 ◽

Cited By ~ 5

Author(s):

Y. Kiyota ◽

T. Hashimoto ◽

T. Udo ◽

A. Kodama ◽

H. Shimamoto ◽

...

Keyword(s):

Selective Epitaxy ◽

Heavily Doped

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Substrate options and add-on process modules for monolithic RF silicon technology

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042878 ◽

2003 ◽

Cited By ~ 18

Author(s):

J.N. Burghartz ◽

M. Bartek ◽

B. Rejaei ◽

P.M. Sarro ◽

A. Polyakov ◽

...

Keyword(s):

Silicon Technology

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High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042917 ◽

2003 ◽

Cited By ~ 6

Author(s):

N. Feilchenfeld ◽

L. Lanzerotti ◽

D. Sheridan ◽

R. Wuthrich ◽

P. Geiss ◽

...

Keyword(s):

High Performance ◽

Low Complexity ◽

Bicmos Technology ◽

Sige Bicmos

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Substrate current control in smart power IC's with a flexible protection structure

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042882 ◽

2003 ◽

Cited By ~ 1

Author(s):

J.P. Laine ◽

O. Gonnard ◽

G. Charitat ◽

M. Bafleur ◽

L. Bertolini

Keyword(s):

Current Control ◽

Smart Power ◽

Substrate Current

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A CMOS-based RF SiGe BiCMOS technology featuring over-100 GHz f/sub max/ SiGe HBTs and 0.13 μm CMOS

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042915 ◽

2003 ◽

Cited By ~ 1

Author(s):

T. Hashimoto ◽

M. Tanomura ◽

H. Fujii ◽

F. Sato ◽

T. Aoyama ◽

...

Keyword(s):

Bicmos Technology ◽

Sige Bicmos

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Analytical formulation and electrical measurements of self-heating in silicon BJT's

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042879 ◽

2003 ◽

Cited By ~ 6

Author(s):

N. Nenadovic ◽

V. d'Alessandro ◽

L.K. Nanver ◽

N. Rinaldi ◽

H. Schellevis ◽

...

Keyword(s):

Electrical Measurements ◽

Analytical Formulation ◽

Self Heating

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Proceedings of the Bipolar/BiCMOS Circuits and Technology MeetingLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOS VCOs

Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

An integrated SiGe transmitter circuit for 24 GHz radar sensors

A 5 GHz radio front-end with automatically Q tuned notch filter

190-GHz f/sub T/, 130-GHz f/sub max/ SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

Substrate options and add-on process modules for monolithic RF silicon technology

High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications

Substrate current control in smart power IC's with a flexible protection structure

A CMOS-based RF SiGe BiCMOS technology featuring over-100 GHz f/sub max/ SiGe HBTs and 0.13 μm CMOS

Analytical formulation and electrical measurements of self-heating in silicon BJT's

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
Latest Publications