Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
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51

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12

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0780375610

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Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOS VCOs

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042888 ◽

2003 ◽

Author(s):

D.Y.C. Lie ◽

X. Yuan ◽

L.E. Larson ◽

T. Robinson ◽

A. Senior ◽

...

Keyword(s):

Phase Noise ◽

Noise Analysis ◽

Fully Integrated ◽

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Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042891 ◽

2003 ◽

Author(s):

D.C. Ahlgren ◽

B. Jagannathan ◽

S.-J. Jeng ◽

P. Smith ◽

D. Angell ◽

...

Keyword(s):

Process Variability ◽

Sige Hbt ◽

Variability Analysis

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High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042917 ◽

2003 ◽

Author(s):

N. Feilchenfeld ◽

L. Lanzerotti ◽

D. Sheridan ◽

R. Wuthrich ◽

P. Geiss ◽

...

Keyword(s):

High Performance ◽

Low Complexity ◽

Bicmos Technology ◽

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An integrated SiGe transmitter circuit for 24 GHz radar sensors

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042920 ◽

2003 ◽

Author(s):

P. Wennekers ◽

A. Ghazionour ◽

R. Reuter

Keyword(s):

Radar Sensors ◽

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A 5 GHz radio front-end with automatically Q tuned notch filter

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042889 ◽

2003 ◽

Author(s):

J.W.M. Rogers ◽

C. Plett

Keyword(s):

Notch Filter ◽

Front End ◽

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190-GHz f/sub T/, 130-GHz f/sub max/ SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042904 ◽

2003 ◽

Author(s):

Y. Kiyota ◽

T. Hashimoto ◽

T. Udo ◽

A. Kodama ◽

H. Shimamoto ◽

...

Keyword(s):

Selective Epitaxy ◽

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Substrate options and add-on process modules for monolithic RF silicon technology

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042878 ◽

2003 ◽

Author(s):

J.N. Burghartz ◽

M. Bartek ◽

B. Rejaei ◽

P.M. Sarro ◽

A. Polyakov ◽

...

Keyword(s):

Silicon Technology

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Substrate current control in smart power IC's with a flexible protection structure

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042882 ◽

2003 ◽

Author(s):

J.P. Laine ◽

O. Gonnard ◽

G. Charitat ◽

M. Bafleur ◽

L. Bertolini

Keyword(s):

Current Control ◽

Smart Power ◽

Substrate Current

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An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042906 ◽

2003 ◽

Author(s):

B. Martinet ◽

F. Romagna ◽

O. Kermarrec ◽

Y. Campidelli ◽

F. Saguin ◽

...

Keyword(s):

Dynamic Characteristics ◽

Static And Dynamic Characteristics

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SiGe W-CDMA transmitter for mobile terminal application

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2002.1042912 ◽

2003 ◽

Author(s):

D. Malhi ◽

H. Joba ◽

C. Demirdag ◽

Y. Takahashi ◽

D. Wang ◽

...

Keyword(s):

Mobile Terminal

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