2006 International Conference on Advanced Semiconductor Devices and Microsystems
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TOTAL DOCUMENTS

72

(FIVE YEARS 0)

H-INDEX

2

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Nickel ohmic contact on silicon carbide

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331156 ◽

2006 ◽

Author(s):

P. Machac ◽

B. Barda ◽

P. Sajdl

Keyword(s):

Silicon Carbide ◽

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Changes of GaAs neutron detectors properties after fast neutron irradiation

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331193 ◽

2006 ◽

Author(s):

Milan Ladziansky ◽

Andrea Sagatova-Per'ochova ◽

Bohumir Zat'ko ◽

Vladimir Necas ◽

Frantisek Dubecky

Keyword(s):

Fast Neutron ◽

Neutron Irradiation ◽

Neutron Detectors ◽

Fast Neutron Irradiation

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Deposition of AZ5214-E Layers on Non-planar Substrates with a "Draping" Technique

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331163 ◽

2006 ◽

Author(s):

P. Elias ◽

D. Gregusova ◽

P. Strichovanec ◽

I. Kostic ◽

J. Novak

Keyword(s):

Planar Substrates

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Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellipsometry

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331173 ◽

2006 ◽

Author(s):

J. Moers ◽

D.M. Buca ◽

M. Goryll ◽

R. Loo ◽

M. Caymax ◽

...

Keyword(s):

Spectroscopic Ellipsometry

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Electronic transport in carbon nanotubes: From individual nanotubes to thin and thick networks

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331142 ◽

2006 ◽

Author(s):

V. Skakalova ◽

A. B. Kaiser ◽

Y.-S. Woo ◽

S. Roth

Keyword(s):

Carbon Nanotubes ◽

Electronic Transport

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Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331195 ◽

2006 ◽

Author(s):

M. Marso ◽

A. Fox ◽

G. Heidelberger ◽

P. Kordos ◽

H. Luth

Keyword(s):

Varactor Diodes ◽

Layer Structures

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The Effect of Rapid Thermal Annealing on Oxygen Precipitation in Nitrogen Doped Silicon Substrate

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331149 ◽

2006 ◽

Author(s):

L'. Stuchlikova ◽

L. Harmatha ◽

M. Tapajna ◽

P. Ballo ◽

P. Pisecny ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Silicon Substrate ◽

Nitrogen Doped ◽

Oxygen Precipitation ◽

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Superior nMOSFET scalability using Fluorineine co-implantation and spike annealing

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331164 ◽

2006 ◽

Author(s):

S. Kubicek ◽

T. Hoffmann ◽

E. Augendre ◽

B. Pawlak ◽

T. Chiarella ◽

...

Keyword(s):

Spike Annealing

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Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331144 ◽

2006 ◽

Author(s):

M. Tapajna ◽

K. Husekova ◽

K. Frohlich ◽

E. Dobrocka ◽

F. Roozeboom

Keyword(s):

Mos Capacitors ◽

Hafnium Silicate ◽

Leakage Characteristics

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Carbon Nanotubes in Electronics

2006 International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2006.331140 ◽

2006 ◽

Author(s):

Siegmar Roth ◽

Jiangling Wang ◽

Viera Skakalova

Keyword(s):

Carbon Nanotubes

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