2016 IEEE 8th International Memory Workshop (IMW)
Latest Publications

TOTAL DOCUMENTS

52

(FIVE YEARS 0)

H-INDEX

6

(FIVE YEARS 0)

Published By IEEE

9781467388337

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

High Operating Temperature Reliability of Optimized Ge-Rich GST Wall PCM Devices

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7495273 ◽

2016 ◽

Author(s):

J. Kluge ◽

G. Navarro ◽

V. Sousa ◽

N. Castellani ◽

S. Blonkowski ◽

...

Keyword(s):

Operating Temperature ◽

High Operating Temperature

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Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7495264 ◽

2016 ◽

Author(s):

Hiroki Koike ◽

Sadahiko Miura ◽

Hiroaki Honjo ◽

Toshinari Watanabe ◽

Hideo Sato ◽

...

Keyword(s):

Test Chip ◽

Yield Improvement

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Theoretical Analysis of Planar Flat Floating Gate NAND Flash Device and Experimental Study of Floating-Gate (FG) / Charge-Trapping (CT) Fusion Device for Comprehensive Understanding of Charge Storage and Operation Principle

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7495292 ◽

2016 ◽

Author(s):

Hang-Ting Lue ◽

Pei-Ying Du ◽

Roger Lo ◽

Chih-Yuan Lu

Keyword(s):

Experimental Study ◽

Theoretical Analysis ◽

Charge Trapping ◽

Floating Gate ◽

Charge Storage ◽

Comprehensive Understanding ◽

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A Bottom-Source Single-Gate Vertical Channel (BS-SGVC) 3D NAND Flash Architecture and Studies of Bottom Source Engineering

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7493562 ◽

2016 ◽

Author(s):

Sheng-Chih Lai ◽

Hang-Ting Lue ◽

Tzu-Hsuan Hsu ◽

Chen-Jun Wu ◽

Li-Yang Liang ◽

...

Keyword(s):

Vertical Channel ◽

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17x Reliability Enhanced LDPC Code with Burst-Error Masking and High-Precision LLR for Highly Reliable Solid-State-Drives with TLC NAND Flash Memory

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7493561 ◽

2016 ◽

Author(s):

Tsukasa Tokutomi ◽

Ken Takeuchi

Keyword(s):

Solid State ◽

High Precision ◽

Flash Memory ◽

Ldpc Code ◽

Solid State Drives ◽

Nand Flash Memory ◽

Burst Error ◽

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IMW 2016 Author Index

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7493560 ◽

2016 ◽

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Demonstration of Reliable Triple-Level-Cell (TLC) Phase-Change Memory

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7495263 ◽

2016 ◽

Author(s):

M. Stanisavljevic ◽

H. Pozidis ◽

A. Athmanathan ◽

N. Papandreou ◽

T. Mittelholzer ◽

...

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

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Improvement of Poly-Si Channel Vertical Charge Trapping NAND Devices Characteristics by High Pressure D2/H2 Annealing.

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7495277 ◽

2016 ◽

Author(s):

L. Breuil ◽

J. G. Lisoni ◽

R. Delhougne ◽

C. L. Tan ◽

J. Van Houdt ◽

...

Keyword(s):

High Pressure ◽

Charge Trapping

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NAND Flash Memory Revolution

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7495285 ◽

2016 ◽

Author(s):

Seiichi Aritome

Keyword(s):

Flash Memory ◽

Nand Flash Memory

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Hybrid CMOS-OxRAM Image Sensor for Overexposure Control

2016 IEEE 8th International Memory Workshop (IMW) ◽

10.1109/imw.2016.7495276 ◽

2016 ◽

Author(s):

Ashwani Kumar ◽

Mukul Sarkar ◽

Manan Suri

Keyword(s):

Image Sensor ◽

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