Evaluation and Optimization of a Cross-Rib Micro-Channel Heat Sink

This article presents a novel cross-rib micro-channel (MC-CR) heat sink to make fluid self-rotate. For a thermal test chip (TTC) with 100 w/cm2, the cross-ribs micro-channel were compared with the rectangular (MC-R) and horizontal rib micro-channel (MC-HR) heat sinks. The results show that, with the cross-rib micro-channel, the junction temperature of the thermal test chip was 336.49 K, and the pressure drop was 22 kPa. Compared with the rectangular and horizontal ribs heat sink, the cross-rib micro-channel had improvements of 28.6% and 14.3% in cooling capability, but the pressure drop increased by 10.7-fold and 5.5-fold, respectively. Then, the effects of the aspect ratio (λ) of micro-channel in different flow rates were studied. It was found that the aspect ratio and cooling performance were non-linear. To reduce the pressure drop, the inclination (α) and spacing (S) of the cross-ribs were optimized. When α = 30°, S = 0.1 mm, and λ = 4, the pressure drop was reduced from 22 kPa to 4.5 kPa. In addition, the heat dissipation performance of the rectangular, staggered fin (MC-SF), staggered rib (MC-SR) and cross-rib micro-channels were analyzed in the condition of the same pressure drop, MC-CR still has superior heat dissipation performance.

Silicon Photonic Cross-bar Switching and Wavelength Conversion in a WDM Network Testbed (Project Report CIAN2-3-Y1)

The goal of this research was to design, fabricate and test chip-scale opto-electronic network systems for access and data networks.

Sub-Milliwatt Transceiver IC for Transcutaneous Communication of an Intracortical Visual Prosthesis

An intracortical visual prosthesis plays a vital role in partially restoring the faculty of sight in visually impaired people. Reliable high date rate wireless links are needed for transcutaneous communication. Such wireless communication should receive stimulation data (downlink) and send out neural recorded data (uplink). Hence, there is a need for an implanted transceiver that is low-power and delivers sufficient data rate for both uplink and downlink. In this paper, we propose an integrated circuit (IC) solution based on impulse radio ultrawideband using on-off keying modulation (OOK IR-UWB) for the uplink transmitter, and binary phase-shift keying (BPSK) with sampling and digital detection for the downlink receiver. To make the solution low-power, predominantly digital components are used in the presented transceiver test-chip. Current-controlled oscillators and an impulse generator provide tunability and complete the on-chip integration. The transceiver test-IC is fabricated in 180 nm CMOS technology and occupies only 0.0272 mm2. At 1.3 V power supply, only 0.2 mW is consumed for the BPSK receiver and 0.3 mW for the IR-UWB transmitter in the transceiver IC, while delivering 1 Mbps and 50 Mbps, respectively. Our link budget analysis shows that this test chip is suitable for intracortical integration considering the future off-chip antennas/coils transcutaneous 3–7 mm communication with the outer side. Hence, our work will enable realistic wireless links for the intracortical visual prosthesis.

Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region

To date, most studies focus on complex designs to realize offset cancelation characteristics in nonvolatile flip-flops (NV-FFs). However, complex designs using switches are ineffective for offset cancelation in the near/subthreshold voltage region because switches become critical contributors to the offset voltage. To address this problem, this paper proposes a novel cross-coupled NMOS-based sensing circuit (CCN-SC) capable of improving the restore yield, based on the concept that the simplest is the best, of an NV-FF operating in the near/subthreshold voltage region. Measurement results using a 65 nm test chip demonstrate that with the proposed CCN-SC, the restore yield is increased by more than 25 times at a supply voltage of 0.35 V, compared to that with a cross-coupled inverter-based SC, at the cost of 18× higher power consumption.

Nonvolatile Analog Switch for Low-Voltage Applications

In this paper, a nonvolatile switch based on n-type floating-gate transistors is described. The switch states are programmed through the memory cell floating-gate voltage, allowing higher levels than the application supply. Furthermore, due to its nonvolatile nature, the power consumption is reduced. The on-state resistance, which does not depend on the supply voltage, is one of the greatest advantages of this type of switch in comparison to conventional switches. This benefit can be successfully exploited in low-voltage applications. The switch on-resistance can be increased without the need for increasing the switch area. The characteristics of the proposed switch were confirmed by the experimental results obtained on a test chip fabricated in a 0.18 µm EEPROM process. Measured on-resistance values between 45 and 70 Ω were obtained for a floating-gate voltage of 6.2 V and input source levels below 2 V. The required programming voltage was 18 V. The maximum off-state leakage current was measured at 5 nA.

CDM Protection Test Structure for I/O Cells in a Submicronic Technology

This paper proposes an investigation of a CDM (charge device model) electrostatic discharge (ESD) protection method used in submicronic input–output (I/O) structures. The modeling of the commonly used ESD protection devices as well as the modeling of the breakdown caused by ESD is not accurate using traditional commercial tools, hence the need for test-chip implementation, whenever a new technology node is used in production. The proposed method involves defining, implementing, testing, and concluding on one test-chip structure named generically “CDM ground resistance”. The structure assesses the maximum ground resistance allowed for the considered technology for which CDM protection is assured. The findings are important because they will be actively used as CDM protection for all I/O structures developed in the considered submicronic technology node. The paper will conclude on the constraints in terms of maximum resistance of ground metal track allowed to be CDM protected.

CONTROLS THE PLASTIC AMPLIFIER GAS DUE TO FLYING IN THE ASSEMBLY LINE

This article test chip reactivity of carbon fiber (CFRP) samples were analyzed in a standard format. First, the nature of ultrasound uncertainty is determined, and this information is used to establish the value of the control that characterized the production of crystals up to 30 layers, with different procedures. Different input and set some Teflon to simulate the presence of desalination. Article explains that the choice for special disability (flexible, medium frequency and configuration templates), collapse can be carried out, the face of the new field in the form the respiratory tract.