1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95
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Thermal treatment and underlayer effects on silane and dichlorosilane based tungsten silicide for deep sub-micron interconnection processes

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524658 ◽

2002 ◽

Author(s):

H. Yen ◽

S.T. Hsia ◽

D. Liu ◽

H.P. Tzeng ◽

H.H. Chen ◽

...

Keyword(s):

Thermal Treatment ◽

Tungsten Silicide

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Integrated circuits through the year 2010

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524625 ◽

2002 ◽

Cited By ~ 1

Author(s):

C.M. Melliar-Smith

Keyword(s):

Integrated Circuits

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Characterization and improvements of flash EEPROM endurance performance by integrating optimized process modules in advanced flash technology

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524710 ◽

2002 ◽

Author(s):

F. Shone ◽

A. Chang ◽

T. Chen ◽

S. Wu ◽

N. Peng ◽

...

Keyword(s):

Endurance Performance

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Influence of submicron LDD-MOSFET charge effect on low power circuits

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524704 ◽

2002 ◽

Cited By ~ 1

Author(s):

P. Klein ◽

K. Hoffmann

Keyword(s):

Low Power ◽

Charge Effect ◽

Low Power Circuits ◽

Power Circuits

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Low voltage hot carrier effects and stress methodology

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524703 ◽

2002 ◽

Cited By ~ 5

Author(s):

S. Aur

Keyword(s):

Low Voltage ◽

Hot Carrier ◽

Hot Carrier Effects

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A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524652 ◽

2002 ◽

Author(s):

C.M. Liu ◽

F.C. Shone ◽

J.B. Kuo

Keyword(s):

Closed Form ◽

Circuit Simulation ◽

Gate Bias ◽

Saturation Model ◽

Back Gate ◽

Self Heating

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Mobility and reliability improvements of fluorinated gate oxide for VLSI technology

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524631 ◽

2002 ◽

Cited By ~ 3

Author(s):

I. Vishnubhotla ◽

A. Balasinski ◽

X.W. Wang ◽

T.P. Ma ◽

H.H. Tseng ◽

...

Keyword(s):

Gate Oxide ◽

Vlsi Technology

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Si-MOSFET scaling down to deep-sub-0.1-micron range and future of silicon LSI

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524700 ◽

2002 ◽

Cited By ~ 4

Author(s):

H. Iwai ◽

H.S. Momose ◽

Y. Katsumata

Keyword(s):

Scaling Down

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A new source-side erase algorithm to reduce disturb problem in flash EPROM

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524712 ◽

2002 ◽

Cited By ~ 1

Author(s):

C. Chen ◽

T.P. Ma

Download Full-text

ULSI memory for multimedia applications

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524626 ◽

2002 ◽

Author(s):

Y. Akatsuka ◽

Y. Yano ◽

S. Niitsu ◽

A. Morino

Keyword(s):

Multimedia Applications

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1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Thermal treatment and underlayer effects on silane and dichlorosilane based tungsten silicide for deep sub-micron interconnection processes

Integrated circuits through the year 2010

Characterization and improvements of flash EEPROM endurance performance by integrating optimized process modules in advanced flash technology

Influence of submicron LDD-MOSFET charge effect on low power circuits

Low voltage hot carrier effects and stress methodology

A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation

Mobility and reliability improvements of fluorinated gate oxide for VLSI technology

Si-MOSFET scaling down to deep-sub-0.1-micron range and future of silicon LSI

A new source-side erase algorithm to reduce disturb problem in flash EPROM

ULSI memory for multimedia applications

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95
Latest Publications