2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

2016 ◽

Author(s):

Y. L. Fang ◽

X. B. Song ◽

Z. H. Feng ◽

J. Y. Yin ◽

Z. R. Zhang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

High Linearity ◽

Effect Transistor

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A novel GaN MMICs packaging using silicon based technology

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/ifws.2016.7803770 ◽

2016 ◽

Author(s):

Xiu-bo Liu ◽

Yong-zhi Zhao ◽

Shao-dong Wang ◽

Zhi-qiang Wang

Keyword(s):

Silicon Based

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Effect of AlN buffer on the properties of AlN films grown on sapphire substrate by MOCVD

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/ifws.2016.7803774 ◽

2016 ◽

Author(s):

Xiang Chen ◽

Yun Zhang ◽

Jianchang Yan ◽

Yanan Guo ◽

Shuo Zhang ◽

...

Keyword(s):

Sapphire Substrate ◽

Aln Buffer

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Study on AIN-based hybrid bulk acoustic wave resonator with low temperature coefficient of frequency

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/ifws.2016.7803773 ◽

2016 ◽

Author(s):

Shuai Yang ◽

Yun Zhang ◽

Lili Sun ◽

Lian Zhang ◽

Zhe Cheng ◽

...

Keyword(s):

Low Temperature ◽

Acoustic Wave ◽

Temperature Coefficient ◽

Bulk Acoustic Wave ◽

Bulk Acoustic Wave Resonator ◽

Wave Resonator ◽

Temperature Coefficient Of Frequency

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Design and fabrication of 1.2kV 4H-SiC DMOSFET

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/ifws.2016.7803745 ◽

2016 ◽

Cited By ~ 1

Author(s):

Runhua Huang ◽

Yonghong Tao ◽

Song Bai ◽

Gang Chen ◽

Ling Wang ◽

...

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Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/ifws.2016.7803758 ◽

2016 ◽

Author(s):

Kai Zhang ◽

Jianjun Zhou ◽

Cen Kong ◽

Yuechan Kong ◽

Tangsheng Chen

Keyword(s):

Current Density ◽

Threshold Voltage ◽

Drain Current ◽

Enhancement Mode

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Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/ifws.2016.7803775 ◽

2016 ◽

Cited By ~ 3

Author(s):

Yanan Guo ◽

Yun Zhang ◽

Jianchang Yan ◽

Xiang Chen ◽

Shuo Zhang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Extraction ◽

Reflection Method ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/ifws.2016.7803764 ◽

2016 ◽

Author(s):

Zijun Chen ◽

Liuan Li ◽

Yue Zheng ◽

Yiqiang Ni ◽

Deqiu Zhou ◽

...

Keyword(s):

Electrical Properties ◽

Si Substrate ◽

Gan Hfet

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Comparative study of temperature-dependent characteristics for SiC MOSFETs

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ◽

10.1109/ifws.2016.7803754 ◽

2016 ◽

Cited By ~ 2

Author(s):

Furong Jiang ◽

Kuang Sheng ◽

Qing Guo

Keyword(s):

Comparative Study ◽

Temperature Dependent

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2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High linearity step-graded AlGaN/GaN heterojunction field effect transistor

Table of contents

A novel GaN MMICs packaging using silicon based technology

Effect of AlN buffer on the properties of AlN films grown on sapphire substrate by MOCVD

Study on AIN-based hybrid bulk acoustic wave resonator with low temperature coefficient of frequency

Design and fabrication of 1.2kV 4H-SiC DMOSFET

Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method

Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate

Comparative study of temperature-dependent characteristics for SiC MOSFETs

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2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High linearity step-graded AlGaN/GaN heterojunction field effect transistor

Table of contents

A novel GaN MMICs packaging using silicon based technology

Effect of AlN buffer on the properties of AlN films grown on sapphire substrate by MOCVD

Study on AIN-based hybrid bulk acoustic wave resonator with low temperature coefficient of frequency

Design and fabrication of 1.2kV 4H-SiC DMOSFET

Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method

Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate

Comparative study of temperature-dependent characteristics for SiC MOSFETs

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Latest Publications