2010 Proceedings of the European Solid State Device Research Conference
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9781424466580
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Impact of fast-recovering NBTI degradation on stability of large-scale SRAM arrays

2010 ◽  
Author(s):  
Stefan Drapatz ◽  
Karl Hofmann ◽  
Georg Georgakos ◽  
Doris Schmitt-Landsiedel
Keyword(s):  
Large Scale

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

2010 ◽  
Author(s):  
Giovanni A. Salvatore ◽  
Livio Lattanzio ◽  
Didier Bouvet ◽  
Adrian M. Ionescu
Keyword(s):  
Curie Temperature ◽  
Design Parameter ◽  
Field Effect ◽  
Field Effect Transistors

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

2010 ◽  
Author(s):  
Livio Lattanzio ◽  
Luca De Michielis ◽  
Arnab Biswas ◽  
Adrian M. Ionescu
Keyword(s):  
Barrier Tunneling

Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

2010 ◽  
Author(s):  
G. Betti Beneventi ◽  
L. Perniola ◽  
A. Fantini ◽  
D. Blachier ◽  
A. Toffoli ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Carbon Doped ◽  
Current Reduction ◽  
Change Memory

CMOS-MEMS free-free beam resonators

2010 ◽  
Author(s):  
J.L. Lopez ◽  
E. Marigo ◽  
J. Giner ◽  
J.L. Munoz-Gamarra ◽  
F. Torres ◽  
...  
Keyword(s):  
Cmos Mems ◽  
Free Beam

SET switching effects on PCM endurance

2010 ◽  
Author(s):  
Vincenzo Della Marca ◽  
Francesca Carboni ◽  
Luca Larcher ◽  
Andrea Padovani ◽  
Paolo Pavan
Keyword(s):  
Set Switching

scholarly journals A new model for the backscatter coefficient in nanoscale MOSFETs

2010 ◽  
Author(s):  
J.-L.P.J. van der Steen ◽  
P. Palestri ◽  
D. Esseni ◽  
R.J.E. Hueting
Keyword(s):  
Backscatter Coefficient ◽  
New Model ◽  
Nanoscale Mosfets
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