2009 21st International Symposium on Power Semiconductor Devices & IC's
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9781424435258
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V

2009 ◽  
Author(s):  
K. Tang ◽  
Z. Li ◽  
T. P. Chow ◽  
Y. Niiyama ◽  
T. Nomura ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Enhancement Mode

Implementation of buffered Super-Junction LDMOS in a 0.18um BCD process

2009 ◽  
Author(s):  
Il-Yong Park ◽  
Yong-Keon Choi ◽  
Kwang-Young Ko ◽  
Chul-Jin Yoon ◽  
Yong-Seong Kim ◽  
...  

On the static performance of the RESURF LDMOSFETS for power ICs

2009 ◽  
Author(s):  
Md Mash-Hud Iqbal ◽  
Florin Udrea ◽  
Ettore Napoli
Keyword(s):  
Static Performance

Effect of mechanical stress on LDMOSFETs: Dependence on orientation and gate bias

2009 ◽  
Author(s):  
U. Aghoram ◽  
J. Liu ◽  
M. Chu ◽  
A.D. Koehler ◽  
S.E. Thompson ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Gate Bias

High voltage SOI P-channel field MOSFET structures

2009 ◽  
Author(s):  
David Hongfei Lu ◽  
Tomonori Mizushima ◽  
Hitoshi Sumida ◽  
Masaru Saito ◽  
Haruo Nakazawa
Keyword(s):  
High Voltage

High frequency 700V PowerBrane LIGBTs in 0.35µm bulk CMOS technology

2009 ◽  
Author(s):  
T. Trajkovic ◽  
N. Udugampola ◽  
V. Pathirana ◽  
A. Mihaila ◽  
F. Udrea ◽  
...  
Keyword(s):  
High Frequency ◽  
Cmos Technology

New self-controlled and self-protected IGBT based integrated switch

2009 ◽  
Author(s):  
F. Capy ◽  
J.P. Laur ◽  
M. Breil ◽  
F. Richardeau ◽  
M. Brunet ◽  
...  

High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates

2009 ◽  
Author(s):  
Nariaki Ikeda ◽  
Shusuke Kaya ◽  
Jiang Li ◽  
Takuya Kokawa ◽  
Mitsuru Masuda ◽  
...  
Keyword(s):  
High Power ◽  
Si Substrates
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