2009 21st International Symposium on Power Semiconductor Devices & IC's
Latest Publications

TOTAL DOCUMENTS

98

(FIVE YEARS 0)

H-INDEX

9

(FIVE YEARS 0)

Published By IEEE

9781424435258

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Effect of mechanical stress on LDMOSFETs: Dependence on orientation and gate bias

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158041 ◽

2009 ◽

Author(s):

U. Aghoram ◽

J. Liu ◽

M. Chu ◽

A.D. Koehler ◽

S.E. Thompson ◽

...

Keyword(s):

Mechanical Stress ◽

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Improved breakdown-voltage complementary MOSFET in a 0.18µm standard CMOS process for switch mode power supply (SMPS) applications

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158046 ◽

2009 ◽

Author(s):

Jeesung Jung ◽

Alex Q. Huang

Keyword(s):

Breakdown Voltage ◽

Power Supply ◽

Cmos Process ◽

Switch Mode Power Supply ◽

Standard Cmos Process ◽

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On the static performance of the RESURF LDMOSFETS for power ICs

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158048 ◽

2009 ◽

Author(s):

Md Mash-Hud Iqbal ◽

Florin Udrea ◽

Ettore Napoli

Keyword(s):

Static Performance

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YFET - Trench superjunction process window extended

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158061 ◽

2009 ◽

Author(s):

Franz Hirler ◽

Holger Kapels

Keyword(s):

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Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158056 ◽

2009 ◽

Author(s):

K. Tang ◽

Z. Li ◽

T. P. Chow ◽

Y. Niiyama ◽

T. Nomura ◽

...

Keyword(s):

Breakdown Voltage ◽

Enhancement Mode

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Implementation of buffered Super-Junction LDMOS in a 0.18um BCD process

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158034 ◽

2009 ◽

Author(s):

Il-Yong Park ◽

Yong-Keon Choi ◽

Kwang-Young Ko ◽

Chul-Jin Yoon ◽

Yong-Seong Kim ◽

...

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Optimisation of 100V high side LDMOS using multiple simulation techniques

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158012 ◽

2009 ◽

Author(s):

M. Elwin ◽

P. Holland ◽

I. Anteney ◽

J. Ellis ◽

L. Armstrong ◽

...

Keyword(s):

Simulation Techniques ◽

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Limitation of the short-circuit ruggedness of high-voltage IGBTs

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5157994 ◽

2009 ◽

Author(s):

A. Kopta ◽

M. Rahimo ◽

U. Schlapbach ◽

N. Kaminski ◽

D. Silber

Keyword(s):

High Voltage ◽

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Interconnect failure due to voltage and humidity in a 30V BCD technology

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158039 ◽

2009 ◽

Author(s):

Don Disney ◽

Robert Blattner

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30V High-side N-channel Lateral Trench MOSFET

2009 21st International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2009.5158068 ◽

2009 ◽

Author(s):

Don Disney ◽

Wilson Chan ◽

Roy Lam ◽

Robert Blattner ◽

Steve Ma ◽

...

Keyword(s):

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