2008 International Conference on Advanced Semiconductor Devices and Microsystems
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9781424423255
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices

2008 ◽  
Author(s):  
M. Florovic ◽  
J. Kovac ◽  
P. Kordos ◽  
J. Skriniarova ◽  
T. Lalinsky ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Semiconductor Devices

Role of Spacer Thickness on Magnetoresistance Characteristics under Mechanical strain

2008 ◽  
Author(s):  
Branislav Anwarzai ◽  
Vladimir Ac ◽  
Stefan Luby ◽  
Eva Majkova ◽  
Rudolf Senderak
Keyword(s):  
Mechanical Strain ◽  
Spacer Thickness

Si3N4 based non-volatile memory structures with embedded Si nanocrystals

2008 ◽  
Author(s):  
P. Basa ◽  
Zs. J. Horvath ◽  
T. Jaszi ◽  
A. E. Pap ◽  
G. Molnar ◽  
...  
Keyword(s):  
Si Nanocrystals ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Structures

III-V MOSFETs for Digital Applications with Silicon Co-Integration

2008 ◽  
Author(s):  
K. Kalna ◽  
A. Asenov ◽  
J. S. Ayubi-Moak ◽  
A. J. Craven ◽  
R. Droopad ◽  
...  

Detection of Breathing

2008 ◽  
Author(s):  
Jiri Kroutil ◽  
Miroslav Husak

Impact of SF6 Plasma on DC and Microwave Performance of AIGaN/GaN HEMT Structures

2008 ◽  
Author(s):  
G. Vanko ◽  
T. Lalinsky ◽  
M. Tomaska ◽  
S. Hascik ◽  
Z. Mozolova ◽  
...  
Keyword(s):  
Gan Hemt

The disposable Dot Field Effect Transistor: Process flow and overlay requirements

2008 ◽  
Author(s):  
J. Moers ◽  
J. Gerharz ◽  
St. Trellenkamp ◽  
A.v.d. Hart ◽  
G. Mussler ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Process Flow ◽  
Effect Transistor
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