Proceedings of IEEE International Electron Devices Meeting
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21
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0780314506
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Device characteristics of 0.1 μm MOSFET with RONO (reoxidized nitrided oxide) gate dielectrics

2002 ◽  
Author(s):  
Y. Egawa ◽  
H. Inoue ◽  
H. Yasuda ◽  
Y. Suzuki ◽  
S. Iwasa ◽  
...  
Keyword(s):  
Gate Dielectrics

Thin CVD stacked gate dielectric for ULSI technology

2002 ◽  
Author(s):  
Hsing-Huang Tseng ◽  
P.J. Tobin
Keyword(s):  
Gate Dielectric

Tenth micron p-MOSFET's with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD

2002 ◽  
Author(s):  
T. Ohguro ◽  
K. Yamada ◽  
N. Sugiyama ◽  
K. Usuda ◽  
Y. Akasaka ◽  
...  
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Channel Layer

Design and the first experiment of a 1 THz gyrotron

2002 ◽  
Author(s):  
T. Shimozuma ◽  
T. Kikunaga ◽  
N. Sato ◽  
H. Shimawaki ◽  
T. Suzuki ◽  
...  

Highly linear capacitive pressure sensors with optimized electrode shapes

2002 ◽  
Author(s):  
H.W. Benzel ◽  
T. Kallfass ◽  
E. Lueder
Keyword(s):  
Pressure Sensors

High performance 0.1 μm CMOS devices with 1.5 V power supply

2002 ◽  
Author(s):  
Y. Taur ◽  
S. Wind ◽  
Y.J. Mii ◽  
Y. Lii ◽  
D. Moy ◽  
...  
Keyword(s):  
Power Supply ◽  
High Performance

Progress in field-emitter array development for high-frequency operation

2002 ◽  
Author(s):  
C.A. Spindt ◽  
C.E. Holland ◽  
A. Rosengreen ◽  
I. Brodie
Keyword(s):  
High Frequency ◽  
Field Emitter ◽  
Emitter Array ◽  
Field Emitter Array ◽  
High Frequency Operation
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