Proceedings of IEEE International Electron Devices Meeting
Latest Publications

TOTAL DOCUMENTS

219

(FIVE YEARS 0)

H-INDEX

21

(FIVE YEARS 0)

Published By IEEE

0780314506

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

An efficient simulation method for linking bipolar process and device optimization to circuit performance

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347388 ◽

2002 ◽

Author(s):

G.A.M. Hurkx ◽

P.G.M. Baltus ◽

E.P.M. Bladt ◽

M.P.G. Knuvers

Keyword(s):

Simulation Method ◽

Circuit Performance ◽

Efficient Simulation ◽

Device Optimization

Download Full-text

High performance 0.1 μm CMOS devices with 1.5 V power supply

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347383 ◽

2002 ◽

Author(s):

Y. Taur ◽

S. Wind ◽

Y.J. Mii ◽

Y. Lii ◽

D. Moy ◽

...

Keyword(s):

Power Supply ◽

High Performance

Download Full-text

Progress in field-emitter array development for high-frequency operation

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347205 ◽

2002 ◽

Author(s):

C.A. Spindt ◽

C.E. Holland ◽

A. Rosengreen ◽

I. Brodie

Keyword(s):

High Frequency ◽

Field Emitter ◽

Emitter Array ◽

Field Emitter Array ◽

High Frequency Operation

Download Full-text

Tenth micron p-MOSFET's with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347317 ◽

2002 ◽

Author(s):

T. Ohguro ◽

K. Yamada ◽

N. Sugiyama ◽

K. Usuda ◽

Y. Akasaka ◽

...

Keyword(s):

High Vacuum ◽

Ultra High Vacuum ◽

Download Full-text

Design and the first experiment of a 1 THz gyrotron

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347330 ◽

2002 ◽

Author(s):

T. Shimozuma ◽

T. Kikunaga ◽

N. Sato ◽

H. Shimawaki ◽

T. Suzuki ◽

...

Download Full-text

Electronics technology for low-power computing and wireless communication

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347412 ◽

2002 ◽

Author(s):

L.A. Glasser

Keyword(s):

Wireless Communication ◽

Low Power ◽

Low Power Computing

Download Full-text

Highly linear capacitive pressure sensors with optimized electrode shapes

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347241 ◽

2002 ◽

Author(s):

H.W. Benzel ◽

T. Kallfass ◽

E. Lueder

Keyword(s):

Pressure Sensors

Download Full-text

Device characteristics of 0.1 μm MOSFET with RONO (reoxidized nitrided oxide) gate dielectrics

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347248 ◽

2002 ◽

Author(s):

Y. Egawa ◽

H. Inoue ◽

H. Yasuda ◽

Y. Suzuki ◽

S. Iwasa ◽

...

Keyword(s):

Gate Dielectrics

Download Full-text

Cell technology directions for advanced MPUs and other memory-embedded logic devices

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347404 ◽

2002 ◽

Author(s):

M. Kinugawa ◽

M. Kakumu

Keyword(s):

Cell Technology ◽

Download Full-text

Thin CVD stacked gate dielectric for ULSI technology

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347343 ◽

2002 ◽

Author(s):

Hsing-Huang Tseng ◽

P.J. Tobin

Keyword(s):

Gate Dielectric

Download Full-text