Device characteristics of 0.1 μm MOSFET with RONO (reoxidized nitrided oxide) gate dielectrics
Keyword(s):
Keyword(s):
2008 ◽
Vol 354
(15-16)
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pp. 1598-1607
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Keyword(s):
2003 ◽
Vol 34
(5-8)
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pp. 363-370
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