2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings
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27

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3

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Published By IEEE

9781467328470, 9781467328487

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Metal-insulator-semiconductor bipolar transistor as a 4F2 vertical RRAM selection device

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632852 ◽

2012 ◽

Author(s):

E. Yalon ◽

D. Ritter

Keyword(s):

Bipolar Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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[Title page]

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632847 ◽

2012 ◽

Keyword(s):

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WBR - word- and block-level hard error repair for memories

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632859 ◽

2012 ◽

Author(s):

Patryk Skoncej

Keyword(s):

Block Level ◽

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Investigation of resistive switching in bipolar TaOx-based resistive random access memory

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632864 ◽

2012 ◽

Author(s):

V. Y.-Q. Zhuo ◽

Y. Jiang ◽

J. Y. Sze ◽

Z. Zhang ◽

J.S. Pan ◽

...

Keyword(s):

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

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Improvement of the dielectric film characteristics of Inter-poly Oxide-Nitride-Oxide (ONO) in Flash memory devices

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632868 ◽

2012 ◽

Author(s):

Yeo Ek Chien

Keyword(s):

Flash Memory ◽

Dielectric Film ◽

Memory Devices ◽

Nitride Oxide ◽

Film Characteristics

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Downsizing and memory array integration of Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632862 ◽

2012 ◽

Author(s):

Shigeki Sakai ◽

Xizhen Zhang ◽

Le Van Hai ◽

Wei Zhang ◽

Mitsue Takahashi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

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FAMe: A novel OTP NV memory cell based on a fuse-antifuse series arrangement

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632855 ◽

2012 ◽

Author(s):

Gerardo Monreal

Keyword(s):

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Non-volatile data storage in HfO2-based ferroelectric FETs

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632863 ◽

2012 ◽

Author(s):

U. Schroeder ◽

E. Yurchuk ◽

S. Mueller ◽

J. Mueller ◽

S. Slesazeck ◽

...

Keyword(s):

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Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632865 ◽

2012 ◽

Author(s):

Yuhao Wang ◽

Yang Shang ◽

Hao Yu

Keyword(s):

Non Destructive

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Exploratory study of Resistive Random Access Memory (R-RAM) scaling beyond 10nm

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings ◽

10.1109/nvmts.2013.6632854 ◽

2012 ◽

Author(s):

ChiaHua Ho ◽

Fu-Liang Yang

Keyword(s):

Exploratory Study ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

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