Journal of Technology Computer Aided Design TCAD
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By Institute Of Electrical And Electronics Engineers

1097-2102

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Simulation of quantum confinement effects in ultra-thin-oxide MOS structures

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449168 ◽

1996 ◽

pp. 1-17 ◽

Cited By ~ 3

Author(s):

M. G. Ancona ◽

Z. Yu ◽

W.-C. Lee ◽

R. W. Dutton ◽

P.V. Voorde

Keyword(s):

Quantum Confinement ◽

Confinement Effects ◽

Quantum Confinement Effects ◽

Thin Oxide ◽

Mos Structures

Download Full-text

High-level TCAD task representation and automation

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449162 ◽

1996 ◽

pp. 1-30 ◽

Cited By ~ 1

Author(s):

Christoph Pichler ◽

Richard Plasun ◽

Rudolf Strasser ◽

Siegfried Selberherr

Keyword(s):

Task Representation ◽

High Level

Download Full-text

Fully unstructured Delaunay mesh generation using a modified advancing front approach for applications in technology cad

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449165 ◽

1996 ◽

pp. 1-38

Author(s):

Peter Fleischmann ◽

Siegfried Selberherr

Keyword(s):

Mesh Generation ◽

Advancing Front ◽

Delaunay Mesh ◽

Technology Cad

Download Full-text

A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449164 ◽

1996 ◽

pp. 1-18

Author(s):

Christoph Wasshuber ◽

Hans Kosina ◽

Siegfried Selberherr

Keyword(s):

Single Electron ◽

Electron Device ◽

Circuit Simulator ◽

Single Electron Device

Download Full-text

TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449178 ◽

1996 ◽

pp. 1-13

Author(s):

S. K. Mukundan ◽

M. P. Pagey ◽

C. R. Cirba ◽

R. D. Schrimpf ◽

K. F. Galloway

Keyword(s):

Energy Balance ◽

Carrier Transport ◽

Transport Equations ◽

Hot Carrier ◽

Hot Carrier Degradation

Download Full-text

Optimized algorithms for three-dimensional cellular topography simulation

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449177 ◽

1996 ◽

pp. 1-39

Author(s):

W. Pyka ◽

R. Martins ◽

S. Selberherr

Keyword(s):

Three Dimensional

Download Full-text

Three-dimensional photolithography simulation

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449163 ◽

1996 ◽

pp. 1-37 ◽

Cited By ~ 1

Author(s):

Heinrich Kirchauer ◽

Siegfried Selberherr

Keyword(s):

Three Dimensional

Download Full-text

Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449159 ◽

1996 ◽

pp. 1-24 ◽

Cited By ~ 4

Author(s):

Chr. Jungemann ◽

S. Decker ◽

R. Thoma ◽

W.-L. Engh ◽

H. Goto

Keyword(s):

Monte Carlo ◽

Phase Space ◽

Device Simulation ◽

General Purpose ◽

Enhancement Technique ◽

Monte Carlo Device Simulation

Download Full-text

Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449160 ◽

1996 ◽

pp. 1-50 ◽

Cited By ~ 11

Author(s):

M V. Fischetti ◽

N. Sano ◽

S. E. Laux ◽

K. Natori

Keyword(s):

Band Structure ◽

High Field ◽

Impact Ionization ◽

Structure Theory ◽

Full Band ◽

Full Band Structure

Download Full-text

A computationally efficient target search algorithm for a Monte Carlo ion implantation simulator

Journal of Technology Computer Aided Design TCAD ◽

10.1109/tcad.1996.6449179 ◽

1996 ◽

pp. 1-19

Author(s):

G. Wang ◽

B. Obradovic ◽

Y. Chen ◽

D. Li ◽

S. Oak ◽

...

Keyword(s):

Monte Carlo ◽

Ion Implantation ◽

Search Algorithm ◽

Computationally Efficient ◽

Target Search

Download Full-text

Journal of Technology Computer Aided Design TCADLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Institute Of Electrical And Electronics Engineers

Simulation of quantum confinement effects in ultra-thin-oxide MOS structures

High-level TCAD task representation and automation

Fully unstructured Delaunay mesh generation using a modified advancing front approach for applications in technology cad

A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling

TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations

Optimized algorithms for three-dimensional cellular topography simulation

Three-dimensional photolithography simulation

Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation

Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs

A computationally efficient target search algorithm for a Monte Carlo ion implantation simulator

Journal of Technology Computer Aided Design TCAD
Latest Publications