SiC Power Materials - Springer Series in Materials Science
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Published By Springer Berlin Heidelberg

9783642058455, 9783662098776

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_8 ◽

2004 ◽

pp. 303-343 ◽

Cited By ~ 3

Author(s):

W. Lu ◽

W. E. Collins ◽

W. C. Mitchel

Keyword(s):

Interfacial Reaction ◽

Ohmic Contact ◽

Material Selection ◽

Contact Formation ◽

Ohmic Contact Formation

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Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_6 ◽

2004 ◽

pp. 209-276 ◽

Cited By ~ 4

Author(s):

Z. C. Feng

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor

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Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_2 ◽

2004 ◽

pp. 63-87 ◽

Cited By ~ 4

Author(s):

J. Dong ◽

A.-B. Chen

Keyword(s):

Crystal Structure ◽

Band Structure ◽

Energy Band ◽

Energy Band Structure ◽

Bonding Energy ◽

Lattice Vibrations ◽

Fundamental Properties

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Sublimation Growth of SiC Single Crystals

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_3 ◽

2004 ◽

pp. 89-121 ◽

Cited By ~ 1

Author(s):

N. Ohtani ◽

T. Fujimoto ◽

M. Katsuno ◽

H. Yashiro

Keyword(s):

Single Crystals ◽

Sublimation Growth

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SiC Nuclear-Radiation Detectors

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_11 ◽

2004 ◽

pp. 411-445 ◽

Cited By ~ 1

Author(s):

N. B. Strokan ◽

A. M. Ivanov ◽

A. A. Lebedev

Keyword(s):

Radiation Detectors ◽

Nuclear Radiation ◽

Nuclear Radiation Detectors

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Oxidation, MOS Capacitors, and MOSFETs

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_9 ◽

2004 ◽

pp. 345-373 ◽

Cited By ~ 1

Author(s):

S. Dimitrijev ◽

H. B. Harrison ◽

P. Tanner ◽

K. Y. Cheong ◽

J. Han

Keyword(s):

Mos Capacitors

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Electron Paramagnetic Resonance Characterization of SiC

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_7 ◽

2004 ◽

pp. 277-302 ◽

Cited By ~ 1

Author(s):

M. E. Zvanut

Keyword(s):

Electron Paramagnetic Resonance ◽

Paramagnetic Resonance ◽

Electron Paramagnetic

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4H-SiC Power-Switching Devices for Extreme-Environment Applications

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_10 ◽

2004 ◽

pp. 375-409 ◽

Cited By ~ 2

Author(s):

Z. Luo ◽

T. Chen ◽

D. C. Sheridan ◽

J. D. Cressler

Keyword(s):

Extreme Environment ◽

Power Switching ◽

Switching Devices

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Crystal Growth of Silicon Carbide: Evaluation and Modeling

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_4 ◽

2004 ◽

pp. 123-160

Author(s):

E. Pernot ◽

M. Pons ◽

R. Madar

Keyword(s):

Silicon Carbide ◽

Crystal Growth

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Lattice Dynamics of Defects and Thermal Properties of 3C-SiC

SiC Power Materials - Springer Series in Materials Science ◽

10.1007/978-3-662-09877-6_5 ◽

2004 ◽

pp. 161-208

Author(s):

D. N. Talwar

Keyword(s):

Thermal Properties ◽

Lattice Dynamics

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SiC Power Materials - Springer Series in Materials ScienceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC

Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition

Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations

Sublimation Growth of SiC Single Crystals

SiC Nuclear-Radiation Detectors

Oxidation, MOS Capacitors, and MOSFETs

Electron Paramagnetic Resonance Characterization of SiC

4H-SiC Power-Switching Devices for Extreme-Environment Applications

Crystal Growth of Silicon Carbide: Evaluation and Modeling

Lattice Dynamics of Defects and Thermal Properties of 3C-SiC

SiC Power Materials - Springer Series in Materials Science
Latest Publications