Crystal Growth of Silicon Carbide: Evaluation and Modeling

2004 ◽  
pp. 123-160
Author(s):  
E. Pernot ◽  
M. Pons ◽  
R. Madar
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth

Total Energy Differences Between Silicon Carbide Polytypes and their Implications for Crystal Growth

1997 ◽  
Vol 492 ◽  
Author(s):  
Sukit Llmpijumnong ◽  
Walter R. L. Lambrecht
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Epitaxial Growth ◽  
Size Effects ◽  
Nearest Neighbor ◽  
Orbital Method ◽  
Full Potential ◽  
Neighbor Interaction ◽  
Island Size ◽  
Annni Model

ABSTRACTThe energy differences between various SiC polytypes are calculated using the full-potential linear muffin-tin orbital method and analyzed in terms of the anisotropie next nearest neighbor interaction (ANNNI) model. The fact that J1 + 2J2 < 0 with J1 > 0 implies that twin boundaries in otherwise cubic material are favorable unless twins occur as nearest neighbor layers. Contrary to some other recent calculations we find J1 > |J2|. We discuss the consequences of this for stabilization of cubic SiC in epitaxial growth, including considerations of the island size effects.

scholarly journals Macrodefects in Cubic Silicon Carbide Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 375-378 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Justinas Palisaitis ◽  
Remigijus Vasiliauskas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Temperature Gradient ◽  
Early Stage ◽  
Growth Conditions ◽  
Temperature Ramp ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

The Study of the Geometry and Growth Trend of Silicon Carbide Crystals

2013 ◽  
Vol 740-742 ◽  
pp. 56-59
Author(s):  
Feng Jui Fong ◽  
Wun Yan Chen ◽  
Shen Tsao ◽  
Ta Ching Hsiao ◽  
Chih Feng Huang
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Growth Process ◽  
Growth Experiment ◽  
Growth Trend ◽  
Silicon Material ◽  
Metallurgical Silicon ◽  
Crystal Growth Process ◽  
Silicon Materials ◽  
Different Sources

The study compared the influences of silicon materials from different sources on the crystal growth process and geometry of silicon carbide (SiC). As revealed by the results of the study, although the purity of commercial silicon material was as high as 11N, the rate of crystal growth was slow. However, if the silicon material made by electron beam refining metallurgical silicon was utilized for the SiC crystal growth experiment, the morphology of SiC crystal was better and the rate of crystal growth was faster despite its purity being only about 4.5N.

Rapid silicon carbide micro-crystal growth by high power CO2 laser

2017 ◽  
Author(s):  
Shizhuo Yin ◽  
Haonan Zhou ◽  
Chang-Jiang Chen ◽  
Wenbin Zhu ◽  
Ju-Hung Chao
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Co2 Laser ◽  
High Power

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth

2012 ◽  
Vol 717-720 ◽  
pp. 37-40 ◽  
Author(s):  
Ta Ching Hsiao ◽  
Sheng Tsao
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Acid Leaching ◽  
Melting Furnace ◽  
Impurity Content ◽  
Low Pressure ◽  
Free Carbon ◽  
Vacuum Induction Melting ◽  
Carbide Formation ◽  
Induction Melting

Silicon carbide powders were prepared in a vacuum induction melting furnace (VIM). Silica and silicon were used as sources of silicon, and graphite powder was used a source of carbon. Pressures of 0.1 and 0.01 atm were selected as the operation conditions, and different silicon carbide powders were prepared. Free carbon and remnant silica were removed by high-temperature baking in air and acid leaching. Low-pressure powders show better crystallinity; moreover, free carbon and silica were rarely found in the product after baking and leaching. The low-pressure grains were prismatic whereas the high-pressure grains were porous. This shows that pressure is a critical parameter in silicon carbide formation, and low-pressure makes the low-temperature synthesis of silicon carbide feasible. Glow discharge mass spectra were used to analyze the impurity content in silicon carbide powders. After baking and leaching, the purity is increased from 3N5 (99.95 wt.%) to 4N5 (99.995 wt.%). Further purification procedures will be combined to meet the quality requirements for crystal growth.

scholarly journals Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11 $$\bar 2$$ 0) surface0) surface

2005 ◽  
Vol 34 (3) ◽  
pp. 318-318
Author(s):  
Masakazu Katsuno ◽  
Noboru Ohtani ◽  
Tatsuo Fujimoto ◽  
Hirokatsu Yashiro
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Seed Crystal

Silicon Carbide: Progress in Crystal Growth

1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Large Area ◽  
High Quality ◽  
Crystal Silicon

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.

Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth

2006 ◽  
Vol 527-529 ◽  
pp. 87-90 ◽  
Author(s):  
Krzysztof Grasza ◽  
Emil Tymicki ◽  
Jaroslaw Kisielewski
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Crystallization Front ◽  
Source Material ◽  
Thermal Interaction ◽  
Crystal Surfaces

Silicon carbide crystals were grown from the vapor. Improvement of the quality of the central part of the crystal was achieved by optimization of the geometry of the source material. Active thermal interaction of the source material and the crystallization front made possible an effective programming of the shape and morphology of the crystal. Termination of micropipes on microfacets formed on the crystallization front during growth was observed.

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

CrystEngComm ◽  
2016 ◽  
Vol 18 (12) ◽  
pp. 2119-2124 ◽  
Author(s):  
Kanaparin Ariyawong ◽  
Christian Chatillon ◽  
Elisabeth Blanquet ◽  
Jean-Marc Dedulle ◽  
Didier Chaussende
Keyword(s):  
Physical Chemistry ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
Crystal Properties

scholarly journals In-situ X-ray Topography on Crystal Growth of Silicon Carbide.

2001 ◽  
Vol 70 (6) ◽  
pp. 641-645 ◽  
Author(s):  
Hirotaka YAMAGUCHI ◽  
Shin-ichi NISHIZAWA ◽  
Tomohisa KATO ◽  
Naoki OYANAGI ◽  
Sadafumi YOSHIDA ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
X Ray
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