Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

Integrated Compact Modelling of a Planar-Gate Non-Punch-Through 3.3kV-1200A IGBT Module for Insightful Analysis and Realistic Interpretation of the Failure Mechanisms

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294950 ◽

2007 ◽

Cited By ~ 5

Author(s):

A. Castellazzi ◽

M. Ciappa ◽

W. Fichtner ◽

J. Urresti-Ibanez ◽

M. Mermet-Guyennet

Keyword(s):

Failure Mechanisms ◽

Realistic Interpretation ◽

Igbt Module ◽

Insightful Analysis

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A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294953 ◽

2007 ◽

Cited By ~ 1

Author(s):

In-Hwan Ji ◽

Kyu-Heon Cho ◽

Seung-Chul Lee ◽

Soo-Seong Kim ◽

Kwang-Hoon Oh ◽

...

Keyword(s):

The Self

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A Digitally Controlled DC-DC Converter Module with a Segmented Output Stage for Optimized Efficiency

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294914 ◽

2007 ◽

Author(s):

Olivier Trescases

Keyword(s):

Output Stage ◽

Digitally Controlled

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600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294939 ◽

2007 ◽

Cited By ~ 27

Author(s):

H. Ruthing ◽

F. Hille ◽

F.-J. Niedernostheide ◽

H.-J. Schulze ◽

B. Brunner

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A diode structure with anode side buried p doped layers for damping of dynamic avalanche

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294952 ◽

2007 ◽

Cited By ~ 3

Author(s):

Min Chen ◽

Josef Lutz ◽

Hans Peter Felsl ◽

Hans-Joachim Schulze

Keyword(s):

Diode Structure ◽

Anode Side

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A 70V UMOS Technology with Trenched LOCOS Process to Reduce Cgs

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294962 ◽

2007 ◽

Cited By ~ 2

Author(s):

Hao Wang ◽

Olivier Trescases ◽

H. P. Edward Xu ◽

Wai Tung Ng ◽

Kenji Fukumoto ◽

...

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Record-low on-Resistance for 0.35 μm based integrated XtreMOSTM Transistors

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294931 ◽

2007 ◽

Cited By ~ 9

Author(s):

P. Moens ◽

F. Bauwens ◽

B. Desoete ◽

J. Baele ◽

K. Vershinin ◽

...

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Compact Double-Side Liquid-Impingement-Cooled Integrated Power Electronic Module

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294930 ◽

2007 ◽

Cited By ~ 27

Author(s):

C.M. Johnson ◽

C. Buttay ◽

S.J. Rashid ◽

F. Udrea ◽

G.A.J. Amaratunga ◽

...

Keyword(s):

Power Electronic

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Induction heating system operation by soft switching GaN heterojunction field effect transistors

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294956 ◽

2007 ◽

Cited By ~ 2

Author(s):

Yuki Niiyama ◽

Mitsuru Masuda ◽

Nariaki Ikeda ◽

Seikoh Yoshida

Keyword(s):

Induction Heating ◽

Field Effect ◽

Field Effect Transistors ◽

Heating System ◽

Soft Switching ◽

System Operation ◽

Heterojunction Field Effect Transistors ◽

Induction Heating System

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First 15V complementary LDMOS transistors in thin SOI 65nm low power technology

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2007.4294969 ◽

2007 ◽

Cited By ~ 9

Author(s):

O. Bon ◽

O. Gonnard ◽

F. Gianesello ◽

C. Raynaud ◽

F. Morancho

Keyword(s):

Low Power

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Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Integrated Compact Modelling of a Planar-Gate Non-Punch-Through 3.3kV-1200A IGBT Module for Insightful Analysis and Realistic Interpretation of the Failure Mechanisms

A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT

A Digitally Controlled DC-DC Converter Module with a Segmented Output Stage for Optimized Efficiency

600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology

A diode structure with anode side buried p doped layers for damping of dynamic avalanche

A 70V UMOS Technology with Trenched LOCOS Process to Reduce Cgs

Record-low on-Resistance for 0.35 μm based integrated XtreMOSTM Transistors

Compact Double-Side Liquid-Impingement-Cooled Integrated Power Electronic Module

Induction heating system operation by soft switching GaN heterojunction field effect transistors

First 15V complementary LDMOS transistors in thin SOI 65nm low power technology

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Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC'sLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Integrated Compact Modelling of a Planar-Gate Non-Punch-Through 3.3kV-1200A IGBT Module for Insightful Analysis and Realistic Interpretation of the Failure Mechanisms

A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT

A Digitally Controlled DC-DC Converter Module with a Segmented Output Stage for Optimized Efficiency

600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology

A diode structure with anode side buried p doped layers for damping of dynamic avalanche

A 70V UMOS Technology with Trenched LOCOS Process to Reduce Cgs

Record-low on-Resistance for 0.35 μm based integrated XtreMOSTM Transistors

Compact Double-Side Liquid-Impingement-Cooled Integrated Power Electronic Module

Induction heating system operation by soft switching GaN heterojunction field effect transistors

First 15V complementary LDMOS transistors in thin SOI 65nm low power technology

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
Latest Publications