Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537)
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Improved TDDB reliability of 1.5 nm thick gate dielectrics grown by radical oxynitridation

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967588 ◽

2002 ◽

Author(s):

T. Yamamoto ◽

T. Ezaki ◽

K. Watanabe ◽

M. Togo ◽

A. Morioka ◽

...

Keyword(s):

Gate Dielectrics

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First-principle theoretical study on reliability SiO/sub 2/ thin films under external electric field

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967568 ◽

2002 ◽

Author(s):

K. Doi ◽

K. Nakamura ◽

A. Tachibana

Keyword(s):

Electric Field ◽

External Electric Field ◽

Theoretical Study ◽

First Principle

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High K gate dielectrics for the silicon industry

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967545 ◽

2002 ◽

Author(s):

L. Manchanda ◽

B. Busch ◽

M.L. Green ◽

M. Morris ◽

R.B. van Dover ◽

...

Keyword(s):

Gate Dielectrics ◽

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Conducting-AFM studies on local dielectric breakdown of ultrathin SiO/sub 2/ films

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967561 ◽

2002 ◽

Author(s):

A. Ando ◽

K. Miki ◽

K. Sakamoto

Keyword(s):

Dielectric Breakdown

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Electrical characterisation of high-k materials prepared by atomic layer CVD

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967554 ◽

2002 ◽

Author(s):

R.J. Carter ◽

E. Cartier ◽

M. Caymax ◽

S. De Gendt ◽

Degraevel R ◽

...

Keyword(s):

Atomic Layer ◽

High K ◽

High K Materials

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First-principle electronic properties of ZrO/sub 2/ and HfO/sub 2/ crystals under external electric field

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967592 ◽

2002 ◽

Author(s):

S. Egami ◽

K. Nakamura ◽

A. Tachibana

Keyword(s):

Electric Field ◽

Electronic Properties ◽

External Electric Field ◽

First Principle

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Dual-poly CVD HfO/sub 2/ gate stack for sub-100 nm CMOS technology

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967552 ◽

2002 ◽

Author(s):

S.J. Lee ◽

C.H. Lee ◽

Y.H. Kim ◽

H.F. Luan ◽

W.P. Bai ◽

...

Keyword(s):

Cmos Technology ◽

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Photo oxidation and PECVD stacked gate insulator for poly-Si TFTs at 200-300°C

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967560 ◽

2002 ◽

Author(s):

Y. Nakata ◽

T. Okamoto ◽

T. Hamada ◽

T. Itoga ◽

Y. Ishii

Keyword(s):

Gate Insulator ◽

Photo Oxidation

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Increasing roughness at SiO/sub 2//Si interface during thermal oxidation

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967562 ◽

2002 ◽

Author(s):

D. Hojo ◽

N. Tokuda ◽

K. Yamabe

Keyword(s):

Thermal Oxidation

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Performance effects of two nitrogen incorporation techniques on TaN/HfO/sub 2/ and poly/HfO/sub 2/ MOSCAP and MOSFET devices

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967550 ◽

2002 ◽

Author(s):

R. Nieh ◽

K. Onishi ◽

Rino Choi ◽

Hag-Ju Cho ◽

Chang Seok Kang ◽

...

Keyword(s):

Nitrogen Incorporation ◽

Performance Effects

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