Improved TDDB reliability of 1.5 nm thick gate dielectrics grown by radical oxynitridation

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967588 ◽

2002 ◽

Author(s):

T. Yamamoto ◽

T. Ezaki ◽

K. Watanabe ◽

M. Togo ◽

A. Morioka ◽

...

Keyword(s):

Gate Dielectrics

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Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics

Proceedings of the International Display Workshops ◽

10.36463/idw.2019.0554 ◽

2019 ◽

pp. 554

Author(s):

SeongCheol Jang ◽

Kihyeon Bae ◽

Kyung Jin Lee ◽

Hyun-Suk Kim

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Dielectrics ◽

Oxide Thin Film ◽

Amorphous Oxide ◽

Microwave Assisted

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Capacitance-Voltage Characteristics of Solution-Based HfZr-Silicate Gate Dielectrics

Proceedings of the International Display Workshops ◽

10.36463/idw.2019.fmcp5-8l ◽

2019 ◽

pp. 764

Author(s):

Nara Lee ◽

Pyungho Choi ◽

Byoungdeog Choi

Keyword(s):

Gate Dielectrics ◽

Capacitance Voltage

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DyScHfOx as High-Îº Gate Dielectrics: Structural and Electrical Properties

ECS Meeting Abstracts ◽

10.1149/ma2007-01/12/565 ◽

2007 ◽

Keyword(s):

Electrical Properties ◽

Gate Dielectrics ◽

Structural And Electrical Properties

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In-plane-gate flexible single-crystalline silicon thin-film transistors with high-k gate dielectrics on plastic substrates

AIP Advances ◽

10.1063/1.5045521 ◽

2019 ◽

Vol 9 (1) ◽

pp. 015111 ◽

Author(s):

Yibo Zhang ◽

Shihui Yu ◽

Kuibo Lan ◽

Lingxia Li ◽

Guoxuan Qin

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Crystalline Silicon ◽

Gate Dielectrics ◽

Single Crystalline Silicon ◽

Silicon Thin Film ◽

Single Crystalline ◽

Plastic Substrates ◽

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Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics

Silicon ◽

10.1007/s12633-021-00954-3 ◽

2021 ◽

Author(s):

G. Sujatha ◽

N. Mohankumar ◽

R. Poornachandran ◽

R. Saravana Kumar ◽

Girish Shankar Mishra ◽

...

Keyword(s):

Gate Dielectrics ◽

Composite Channel ◽

Noise Characterization

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Effect of Gate Dielectrics on Characteristics of High-Energy Proton-Irradiated AlGaN/GaN MISHEMTs

Radiation Physics and Chemistry ◽

10.1016/j.radphyschem.2021.109473 ◽

2021 ◽

pp. 109473

Author(s):

Jun-Hyeok Lee ◽

Dong-Seok Kim ◽

Jeong-Gil Kim ◽

Woo-Hyun Ahn ◽

Youngho Bae ◽

...

Keyword(s):

Gate Dielectrics ◽

High Energy ◽

High Energy Proton ◽

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High Sensitivity of Dual Gate ISFETs Using HfO2 and HfO2/Y2O3 Gate Dielectrics

ACS Applied Electronic Materials ◽

10.1021/acsaelm.1c00391 ◽

2021 ◽

Author(s):

Deepa Bhatt ◽

Siddhartha Panda

Keyword(s):

Gate Dielectrics ◽

High Sensitivity ◽

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Device characteristics of 0.1 μm MOSFET with RONO (reoxidized nitrided oxide) gate dielectrics

Proceedings of IEEE International Electron Devices Meeting ◽

10.1109/iedm.1993.347248 ◽

2002 ◽

Author(s):

Y. Egawa ◽

H. Inoue ◽

H. Yasuda ◽

Y. Suzuki ◽

S. Iwasa ◽

...

Keyword(s):

Gate Dielectrics

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Growth related properties of pentacene thin film transistors with different gate dielectrics

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2007.10.027 ◽

2008 ◽

Vol 354 (15-16) ◽

pp. 1598-1607 ◽

Author(s):

A.-L. Deman ◽

M. Erouel ◽

D. Lallemand ◽

M. Phaner-Goutorbe ◽

P. Lang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Dielectrics

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Plasmon-Phonon Resonance at Gate-Electrode/Gate-Dielectric Interface on Carrier Mobility of Organic TFTs with High-k Gate Dielectrics

Applied Surface Science ◽

10.1016/j.apsusc.2021.150374 ◽

2021 ◽

pp. 150374

Author(s):

Y.X. Ma ◽

H. Su ◽

W.M. Tang ◽

P.T. Lai

Keyword(s):

Carrier Mobility ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Gate Electrode ◽

Dielectric Interface ◽

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