2011 International Meeting for Future of Electron Devices
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67

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2

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Published By IEEE

9781612841458

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Performance improvement of metal-gate/high-k CMOS by NiPt-silicidation using laser annealing

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944834 ◽

2011 ◽

Author(s):

Y. Yamamoto ◽

T. Yamaguchi ◽

Y. Kawasaki ◽

S. Kudo ◽

J. Tsuchimoto ◽

...

Keyword(s):

Performance Improvement ◽

Laser Annealing ◽

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On-chip Robotics for biomedical innovations

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944828 ◽

2011 ◽

Author(s):

Fumihito Arai

Keyword(s):

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Low-temperature crystallization of amorphous Ge thin films using metal nanoparticles

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944872 ◽

2011 ◽

Author(s):

Kosuke Bundo ◽

Takanori Imazawa ◽

Mutsunori Uenuma ◽

Yasuaki Ishikawa ◽

Heiji Watanabe ◽

...

Keyword(s):

Low Temperature ◽

Metal Nanoparticles ◽

Low Temperature Crystallization ◽

Temperature Crystallization

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Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944869 ◽

2011 ◽

Author(s):

Guobin Wei ◽

Hideki Murakami ◽

Tomohiro Fujioka ◽

Akio Ohta ◽

Yuta Goto ◽

...

Keyword(s):

Resistive Switching ◽

Switching Characteristics

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Analysis of hall effect in micro poly-Si Hall devices with p-type doping films for magnetic area sensors

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944880 ◽

2011 ◽

Author(s):

Tsuyoshi Segawa ◽

Yohei Yamaguchi ◽

Hayami Hashimoto ◽

Mutsumi Kimura

Keyword(s):

Hall Effect ◽

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Application of endohedral iron-oxide ferritin to resistive memory

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944866 ◽

2011 ◽

Author(s):

Yasuhiro Kakihara ◽

Mutsunori Uenuma ◽

Naofumi Okamoto ◽

Kentaro Kawano ◽

Bin Zheng ◽

...

Keyword(s):

Resistive Memory

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Reconsideration of minority carrier diffusion in nanoscale wire Si pn junction

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944845 ◽

2011 ◽

Author(s):

Shinji Fujita ◽

Toshiya Kotoug ◽

Yasuhisa Omura

Keyword(s):

Minority Carrier ◽

Carrier Diffusion ◽

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New statistical optimization method in fabricating 65nm MOSFET transistors using Monte Carlo and Dual Pearson models

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944840 ◽

2011 ◽

Author(s):

Jia-Chun Lin ◽

Chu-Yu Chen ◽

Meng-Hua Tsa

Keyword(s):

Monte Carlo ◽

Optimization Method ◽

Statistical Optimization

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Social infrastructure watch by RF recognition system and sensors

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944839 ◽

2011 ◽

Author(s):

Takuya Nishimura ◽

Yukio Iida

Keyword(s):

Recognition System ◽

Social Infrastructure

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The role of high-doped source and drain on device performance in nano-scale Si-MOSFETs

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944825 ◽

2011 ◽

Author(s):

Nobuyuki Sano

Keyword(s):

Device Performance ◽

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