The role of high-doped source and drain on device performance in nano-scale Si-MOSFETs

Author(s):  
Nobuyuki Sano
Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 39
Author(s):  
Qi Chen ◽  
Zhicheng Yan ◽  
Hao Zhang ◽  
KiBuem Kim ◽  
Weimin Wang

Al-based metallic glasses have a special atomic structure and should have a unique degradation ability in azo dye solutions. The Al88Ni9Y3 (Y3), Al85Ni9Y6 (Y6) and Al82Ni9Y9 (Y9) glassy ribbons are melt spun and used in degrading methyl orange (MO) azo dye solution with adding H2O2. With increasing cY, the as-spun ribbons have an increasing GFA (glass formability) and gradually decreased the degradation rate of MO solution. TEM (transmission electron microscopy) results show that the Y3 ribbon has nano-scale crystallites, which may form the channels to transport elements to the surface for degrading the MO solution. After adding H2O2, the degradation efficiency of Al-based glasses is improved and the Y6 ribbon has formed nano-scale crystallites embedded in the amorphous matrix and it has the largest improvement in MO solution degradation. These results indicate that forming nano-scale crystallites and adding H2O2 are effective methods to improve the degradation ability of Al-based glasses in azo dye solutions.


2019 ◽  
Vol 775 ◽  
pp. 1301-1306 ◽  
Author(s):  
Xiaodi Wei ◽  
Hong Huang ◽  
Cong Ye ◽  
Wei Wei ◽  
Hao Zhou ◽  
...  

Author(s):  
Munawar A Riyadi ◽  
Irawan D Sukawati ◽  
Teguh Prakoso ◽  
Darjat Darjat

The recent progress of dimension scaling of electronic device into nano scale has motivated the invention of alternative materials and structures. One new device that shows great potential to prolong the scaling is junctionless FET (JLFET). In contrast to conventional MOSFETs, JLFET does not require steep junction for source and drain. The device processing directly influence the performance, therefore it is crucial to understand the role of gate processing in JLFET. This paper investigates the influence of gate material and process on subthreshold performance of junctionless FET, by comparing four sets of gate properties and process techniques. The result shows that in terms of subthreshold slope, JLFET approaches near ideal value of 60 mV/decade, which is superior than the SOI FET for similar doping rate. On the other hand, the threshold value shows different tendencies between those types of device.


Author(s):  
Mircea Teodorescu ◽  
Stephanos Theodossiades ◽  
Homer Rahnejat

The paper highlights the complex issues involved in impact dynamics at nano-scale, prevalent in MEMS. The role of protective layers on the silicon substrate is investigated. It is found that the expected viscoelastic behavior of these layers is not activated due to the very short (almost instantaneous) impact times.


Langmuir ◽  
2020 ◽  
Vol 36 (10) ◽  
pp. 2612-2621 ◽  
Author(s):  
Mário C. Vebber ◽  
Trevor M. Grant ◽  
Jaclyn L. Brusso ◽  
Benoît H. Lessard

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