The role of high-doped source and drain on device performance in nano-scale Si-MOSFETs
2019 ◽
Vol 775
◽
pp. 1301-1306
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2016 ◽
Vol 657
◽
pp. 123-135
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Keyword(s):
2016 ◽
Vol 6
(2)
◽
pp. 895
Keyword(s):
Keyword(s):