Electrically active defects in solid phase epitaxial silicon

The main technological problem in the manufacture of electronics on silicon-on-sapphire (SOS) wafers is the high density of defects in the epitaxial silicon layer. The modern method of obtaining ultrathin SOS wafers using solid-phase epitaxial recrystallization (SPER) and pyrogenic thinning that significantly reduce the defect density in these layers. Nevertheless, the influence of the defect density in submicron SOS layers on the structural quality of ultrathin SOS layers remains unclear. In this work, ultrathin (100 nm) SOS wafers were obtained by SPER of submicron (300 nm) SOS wafers with different structural quality. The crystallinity of 300 nm layers before the recrystallization process and ultrathin layers was determined by XRD and TEM. It was found that the smallest values of the FWHM 0.19-0.20° were observed for the ultrathin SOS layers obtained on the basis of 300 nm SOS wafers with the best structural quality. It was shown that the structural perfect near-surface Si layer, which serves as a seed layer in SPER process, and the double implantation regime allow to reduce the linear defect density in the ultrathin SOS layers by ~ 1×104 cm-1.

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Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates

MRS Proceedings ◽

10.1557/proc-762-a6.14 ◽

2003 ◽

Vol 762 ◽

Author(s):

M. S. Mason ◽

C.M. Chen ◽

H.A. Atwater

Keyword(s):

Epitaxial Growth ◽

Polycrystalline Silicon ◽

Solid Phase ◽

Chemical Vapor ◽

Growth Conditions ◽

Solid Phase Epitaxy ◽

Epitaxial Silicon ◽

Hot Wire ◽

Transmission Electron ◽

Silicon Growth

AbstractWe investigate low-temperature epitaxial growth of thin silicon films on Si [100] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300 nm thick epitaxial layers at 300°C on silicon [100] substrates using a high H2:SiH4 ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.

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Characterization of CMOS Devices in 0.5-μm Silicon-On-Sapphire Films Modified by Solid Phase Epitaxy and Regrowth (Spear)

MRS Proceedings ◽

10.1557/proc-33-35 ◽

1984 ◽

Vol 33 ◽

Cited By ~ 6

Author(s):

P.K. Vasudev ◽

D.C. Mayer

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Solid Phase Epitaxy ◽

Epitaxial Silicon ◽

Leakage Currents ◽

Propagation Delays

ABSTRACTComplementary Metal-Oxide-Semiconductor (CMOS) devices and circuits with minimum feature sizes of about 1 μm were fabricated in 0.5-μm-thick epitaxial Silicon-On-Sapphire (SOS) films. The films were modified by ion implantation and subsequent solid phase recrystallization processes which reduced the total microtwin concentrations in the Si layers by more than a hundredfold, while increasing electron and hole channel mobilities between 40 to 50%. Leakage currents were reduced by over 2 orders of magnitude, while drive currents and subthreshold slopes showed significant improvements over as–grown SOS films. Propagation delays of less than 80 psec were obtained for CMOS/SOS inverters with Leff = 0.6 μm.

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Solid Phase Epitaxial Recrystallization of Sos, with Applications to Submicrometer Cmos and Bipolar Devices

MRS Proceedings ◽

10.1557/proc-53-121 ◽

1985 ◽

Vol 53 ◽

Cited By ~ 2

Author(s):

P.K. Vasudev

Keyword(s):

Large Scale ◽

Solid Phase ◽

Inversion Layer ◽

Very Large Scale Integration ◽

Epitaxial Silicon ◽

Leakage Currents ◽

Bipolar Devices ◽

Propagation Delays ◽

Large Scale Integration ◽

Scale Integration

ABSTRACTCMOS/SOS devices and circuits were fabricated in 0.3-µm-thick epitaxial silicon-on-sapphire (SOS) films. Two solid phase epitaxial recrystallization techniques (DSPE* and SPEAR**) reduced the total microtwin concentrations in the Si layers more than ten- fold, while increasing electron and hole inversion layer mobilities between 30 and 45%. Leakage currents were substantially reduced in all SPEAR devices and in n-channel DSPE transistors, with some increase observed for p-channel DSPE devices. Drive currents and subthresholds slopes also showed significant improvement in both n- and p-devices. Propagation delays below 75 ps were obtained for CMOS/SOS inverters with Lef = 0.5 µm. The application of DSPE and SPEAR techniques to 0.3-µm SOS films will extend the scaling of CMOS/SOS to circuits with very large scale integration (VLSI) complexity.

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Solid-phase immunoelectron microscopy for rapid diagnosis of enteroviruses

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100111240 ◽

1984 ◽

Vol 42 ◽

pp. 226-227 ◽

Cited By ~ 1

Author(s):

K. Pegg-Feige ◽

F. W. Doane

Keyword(s):

Electron Microscopy ◽

Cell Culture ◽

Immunoelectron Microscopy ◽

Detection Method ◽

Solid Phase ◽

Protein A ◽

Plant Viruses ◽

Rapid Diagnosis ◽

Virus Diagnosis ◽

Antiviral Antibody

Immunoelectron microscopy (IEM) applied to rapid virus diagnosis offers a more sensitive detection method than direct electron microscopy (DEM), and can also be used to serotype viruses. One of several IEM techniques is that introduced by Derrick in 1972, in which antiviral antibody is attached to the support film of an EM specimen grid. Originally developed for plant viruses, it has recently been applied to several animal viruses, especially rotaviruses. We have investigated the use of this solid phase IEM technique (SPIEM) in detecting and identifying enteroviruses (in the form of crude cell culture isolates), and have compared it with a modified “SPIEM-SPA” method in which grids are coated with protein A from Staphylococcus aureus prior to exposure to antiserum.

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Application of solid-phase immune electron microscopy to study physical and stability characteristics of enterically transmitted non-a, non-b hepatitis virus

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100102481 ◽

1988 ◽

Vol 46 ◽

pp. 80-81

Author(s):

Charles D. Humphrey ◽

E. H. Cook ◽

Karen A. McCaustland ◽

Daniel W. Bradley

Keyword(s):

Electron Microscopy ◽

Hepatitis A ◽

Hepatitis A Virus ◽

Solid Phase ◽

Etiologic Agent ◽

World Health ◽

Health Concern ◽

Morphological Identification ◽

Immune Electron Microscopy

Enterically transmitted non-A, non-B hepatitis (ET-NANBH) is a type of hepatitis which is increasingly becoming a significant world health concern. As with hepatitis A virus (HAV), spread is by the fecal-oral mode of transmission. Until recently, the etiologic agent had not been isolated and identified. We have succeeded in the isolation and preliminary characterization of this virus and demonstrating that this agent can cause hepatic disease and seroconversion in experimental primates. Our characterization of this virus was facilitated by immune (IEM) and solid phase immune electron microscopic (SPIEM) methodologies.Many immune electron microscopy methodologies have been used for morphological identification and characterization of viruses. We have previously reported a highly effective solid phase immune electron microscopy procedure which facilitated identification of hepatitis A virus (HAV) in crude cell culture extracts. More recently we have reported utilization of the method for identification of an etiologic agent responsible for (ET-NANBH).

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Identification of hepatitis a virus in cell cultures by solid phase immune electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100142815 ◽

1986 ◽

Vol 44 ◽

pp. 238-239

Author(s):

C.D. Humphrey ◽

T.L. Cromeans ◽

E.H. Cook ◽

D.W. Bradley

Keyword(s):

Electron Microscopy ◽

Liquid Phase ◽

Cell Cultures ◽

Rapid Detection ◽

Hepatitis A ◽

Hepatitis A Virus ◽

Solid Phase ◽

Immune Electron Microscopy ◽

Detection And Identification

There is a variety of methods available for the rapid detection and identification of viruses by electron microscopy as described in several reviews. The predominant techniques are classified as direct electron microscopy (DEM), immune electron microscopy (IEM), liquid phase immune electron microscopy (LPIEM) and solid phase immune electron microscopy (SPIEM). Each technique has inherent strengths and weaknesses. However, in recent years, the most progress for identifying viruses has been realized by the utilization of SPIEM.

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