2009 IEEE International Interconnect Technology Conference
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9781424444922, 9781424444939

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A new physical model and experimental measurements of copper interconnect resistivity considering size effects and line-edge roughness (LER)

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090396 ◽

2009 ◽

Cited By ~ 24

Author(s):

Gerald Lopez ◽

Jeffrey Davis ◽

James Meindl

Keyword(s):

Physical Model ◽

Size Effects ◽

Experimental Measurements ◽

Line Edge Roughness ◽

Copper Interconnect ◽

Edge Roughness

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Novel dielectric deposition technology for advanced interconnect with air gap

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090333 ◽

2009 ◽

Cited By ~ 3

Author(s):

Jacques Faguet ◽

Eric Lee ◽

Junjun Liu ◽

Jozef Brcka ◽

Osayuki Akiyama

Keyword(s):

Air Gap ◽

Deposition Technology

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TSV-aware interconnect length and power prediction for 3D stacked ICs

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090331 ◽

2009 ◽

Cited By ~ 35

Author(s):

Dae Hyun Kim ◽

Saibal Mukhopadhyay ◽

Sung Kyu Lim

Keyword(s):

Power Prediction

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Electrode and substrate contacts in carbon nanofiber interconnects

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090360 ◽

2009 ◽

Author(s):

Tsutomu Saito ◽

Hisashi Yabutani ◽

Toshishige Yamada ◽

Patrick Wilhite ◽

Cary Y. Yang

Keyword(s):

Carbon Nanofiber

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Low resistive and highly reliable copper interconnects in combination of silicide-cap with Ti-barrier for 32 nm-node and beyond

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090401 ◽

2009 ◽

Cited By ~ 3

Author(s):

Y. Hayashi ◽

N. Matsunaga ◽

M. Wada ◽

S. Nakao ◽

K. Watanabe ◽

...

Keyword(s):

Copper Interconnects

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Back-end-of-line integration approaches for resistive memories

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090335 ◽

2009 ◽

Cited By ~ 4

Author(s):

V. Jousseaume ◽

J. Buckley ◽

Y. Bernard ◽

P. Gonon ◽

C. Vallee ◽

...

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A self-aligned airgap interconnect scheme

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090367 ◽

2009 ◽

Cited By ~ 1

Author(s):

Hsien-Wei Chen ◽

Shin-Puu Jeng ◽

Hao-Yi Tsai ◽

Yu-Wen Liu ◽

Hsiu-Ping Wei ◽

...

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[Front matter]

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090322 ◽

2009 ◽

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Determination of the impact of field enhancement in low-k dielectric breakdown

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090353 ◽

2009 ◽

Author(s):

Muhammad Bashir ◽

Linda Milor

Keyword(s):

Dielectric Breakdown ◽

Field Enhancement ◽

The Impact ◽

Low K

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Plasma altered layer model for plasma damage characterization of porous OSG films

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090345 ◽

2009 ◽

Cited By ~ 3

Author(s):

H. Shi ◽

H. Huang ◽

J. Bao ◽

J. Im ◽

P. S. Ho ◽

...

Keyword(s):

Layer Model ◽

Plasma Damage ◽

Damage Characterization ◽

Altered Layer

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2009 IEEE International Interconnect Technology ConferenceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A new physical model and experimental measurements of copper interconnect resistivity considering size effects and line-edge roughness (LER)

Novel dielectric deposition technology for advanced interconnect with air gap

TSV-aware interconnect length and power prediction for 3D stacked ICs

Electrode and substrate contacts in carbon nanofiber interconnects

Low resistive and highly reliable copper interconnects in combination of silicide-cap with Ti-barrier for 32 nm-node and beyond

Back-end-of-line integration approaches for resistive memories

A self-aligned airgap interconnect scheme

[Front matter]

Determination of the impact of field enhancement in low-k dielectric breakdown

Plasma altered layer model for plasma damage characterization of porous OSG films

2009 IEEE International Interconnect Technology Conference
Latest Publications