IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780375580

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Polarity dependent reliability of advanced MOSFET using MOCVD nitrided Hf-silicate high-k gate dielectric

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194241 ◽

2003 ◽

Cited By ~ 2

Author(s):

J. Zhang ◽

E. Zhao ◽

Q. Xiang ◽

J. Chan ◽

J. Jeon ◽

...

Keyword(s):

Gate Dielectric ◽

High K ◽

High K Gate Dielectric

Real case study of SWEAT EM test on via/line structure as process reliability monitor methodology

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194259 ◽

2003 ◽

Cited By ~ 1

Author(s):

K.L.Y. Andrew ◽

Bee Hoon Lim ◽

H.K. Yap ◽

Y.C. Tan ◽

K.F. Lo

Keyword(s):

Real Case ◽

Line Structure ◽

Process Reliability

Effect of reduced current density stress on the results of isothermal electromigration test for Cu single damascene line

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194234 ◽

2003 ◽

Author(s):

Kin Leong ◽

Y. Andrew ◽

Bee Hoon Lim

Keyword(s):

Current Density

Electromigration simulation in Cu-low-K multilevel interconnect segments

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194233 ◽

2003 ◽

Cited By ~ 1

Author(s):

V. Sukharev ◽

R. Choudhury ◽

C.W. Park

Keyword(s):

Low K

Fast and reliable WLR monitoring methodology for assessing thick dielectrics test structures integrated in the kerf of product wafers

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194239 ◽

2003 ◽

Cited By ~ 2

Author(s):

A. Martin ◽

J. von Hagen ◽

J. Fazekas ◽

K.-H. Allers

Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194245 ◽

2003 ◽

Cited By ~ 3

Author(s):

E.-X. Zhao ◽

J. Chan ◽

J. Zhang ◽

A. Marathe ◽

K. Taylor

Keyword(s):

Temperature Dependent ◽

Hot Carrier

Temperature determination methods on copper material for highly accelerated electromigration tests (e.g. SWEAT)

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194231 ◽

2003 ◽

Cited By ~ 7

Author(s):

J. von Hagen ◽

H.A. Schafft

Keyword(s):

Temperature Determination ◽

Copper Material ◽

Determination Methods

Fast wafer level monitoring of stress induced leakage current in deep sub-micron embedded non-volatile memory processes

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194237 ◽

2003 ◽

Author(s):

Guoqiao Tao ◽

A. Scarpa ◽

H. Valk ◽

L. van Marwijk ◽

K. van Dijk ◽

...

Keyword(s):

Leakage Current ◽

Wafer Level ◽

Memory Processes ◽

Non Volatile Memory ◽

Volatile Memory ◽

Stress Induced Leakage Current ◽

Level Monitoring

A systematic leakage current analysis of gate oxide soft breakdown

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194267 ◽

2003 ◽

Cited By ~ 1

Author(s):

J.C. Reiner

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Current Analysis ◽

Soft Breakdown

The impact of NBTI and HCI on deep sub-micron PMOSFETs' lifetime

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194249 ◽

2003 ◽

Cited By ~ 2

Author(s):

Chul-Hee Jeon ◽

Sam-Young Kim ◽

Hyun-Soo Kim ◽

Chae-Bog Rim

Keyword(s):

The Impact

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Polarity dependent reliability of advanced MOSFET using MOCVD nitrided Hf-silicate high-k gate dielectric

Real case study of SWEAT EM test on via/line structure as process reliability monitor methodology

Effect of reduced current density stress on the results of isothermal electromigration test for Cu single damascene line

Electromigration simulation in Cu-low-K multilevel interconnect segments

Fast and reliable WLR monitoring methodology for assessing thick dielectrics test structures integrated in the kerf of product wafers

Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs

Temperature determination methods on copper material for highly accelerated electromigration tests (e.g. SWEAT)

Fast wafer level monitoring of stress induced leakage current in deep sub-micron embedded non-volatile memory processes

A systematic leakage current analysis of gate oxide soft breakdown

The impact of NBTI and HCI on deep sub-micron PMOSFETs' lifetime

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02
Latest Publications