In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs

AbstractElectron Cyclotron Resonance (ECR) plasma etching with additional if-biasing produces etch rates ≥ 2,500Å/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AtlnP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ˜200Å from the surface relative to the RIE samples.

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In-Situ Electron Cyclotron Resonance (ECR) Plasma Potential Determination Using an Emissive Probe

Proceedings of the 2005 Particle Accelerator Conference ◽

10.1109/pac.2005.1591000 ◽

2006 ◽

Author(s):

H.J. You ◽

Y. Liu ◽

F.W. Meyer

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Potential ◽

Electron Cyclotron ◽

Ecr Plasma ◽

Emissive Probe

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In Situ Studies of Electron Cyclotron Resonance Plasma Etching of Semiconductors by Spectroscopic Ellipsometry

MRS Proceedings ◽

10.1557/proc-279-819 ◽

1992 ◽

Vol 279 ◽

Author(s):

S. Nafis ◽

N. J. Ianno ◽

Paul G. Snyder ◽

John A. Woollam ◽

Blame Johs

Keyword(s):

Real Time ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Bulk Silicon ◽

Bulk Materials ◽

Insight Into ◽

Resonance Plasma

ABSTRACTIn situ ellipsometry at selected wavelengths in the spectral range 280 nm to 1000 nnn was performed during the rf bias assisted electron cyclotron resonance (ECR) etching of bulk silicon, GaAs, InP, and GaAs/AlGaAs/GaAs, and InGaAs/InP layered strcutures by a CCl2F2 based etch gas.While real time thickness changes for bulk materials cannot be determined ellipsometrically, some insight into the etch mechanism may be gained by observing the effect of the process on the surface dynamically, and after the etch process has been completed. Monitoring of the layered structures during etching can provide a real time measure of the amount of material remaining in the layer being etched, and provide tight process control.

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Ellipsometric Monitoring of Defects Induced by Electron Cyclotron Resonance Etching of GaAs

MRS Proceedings ◽

10.1557/proc-378-689 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 1

Author(s):

P. G. Snyder ◽

N. J. Ianno ◽

B. Wigert ◽

S. Pittal ◽

B. Johs ◽

...

Keyword(s):

Spectroscopic Ellipsometry ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Red Shift ◽

Ex Situ ◽

Crystalline Lattice ◽

Ecr Plasma ◽

Hydrogen Exposure ◽

Lattice Damage

AbstractSpectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24–5 eV, included the E1, E1+A1 critical points. The Ej, Ei+Aj structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.

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