Optical study of band bending and interface recombination at Sb, S and Se covered gallium arsenide surfaces

Author(s):  
S. Hildebrandt ◽  
J. Schreiber ◽  
W. Kircher ◽  
R. Kuzmenko
1993 ◽  
Vol 63 (1-4) ◽  
pp. 153-157 ◽  
Author(s):  
S. Hildebrandt ◽  
J. Schreiber ◽  
W. Kircher ◽  
R. Kuzmenko

2010 ◽  
Vol 114 (51) ◽  
pp. 22677-22683 ◽  
Author(s):  
Thomas Kaindl ◽  
Klaus Adlkofer ◽  
Tomoyuki Morita ◽  
Junzo Umemura ◽  
Oleg Konovalov ◽  
...  

Author(s):  
Sumio Iijima ◽  
Tung Hsu

Suppose the thickness of a thin film of a crystal varies periodically like a regular array of surface steps, kinematical intensities of diffracted waves from this crystal are modulated by a shape transform,


1986 ◽  
Vol 14 (4) ◽  
pp. 264-291
Author(s):  
K. L. Oblizajek ◽  
A. G. Veith

Abstract Treadwear is explained by specific mechanical properties and actions of tires. Rubber shear stresses in the contact zone between the tire and the road become large at large slip angles. When normal stresses are insufficient to prevent sliding at the rear of the footprint, wear occurs at a rate that depends on test severity. Two experimental approaches are described to relate treadwear to tire characteristics. The first uses transducers imbedded in a simulated road surface to obtain direct measurements of contact stresses on the loaded, freely-rolling, steered tires. The second approach is developed with the aid of a simple carcass, tread-band, tread-rubber tire model. Various tire structural configurations; characterized by carcass spring rate, edgewise flexural band stiffness, and tread rubber shear stiffness; are simulated and lateral shear stress response in the contact zone is determined. Tires featuring high band stiffness and low carcass stiffness generate lower lateral shear stress levels. Furthermore, coupling of tread-rubber stiffness and band flexural rigidity are important in determining level of shear stresses. Laboratory measurements with the described apparatus produced values of tread-band bending and carcass lateral stiffness for several tire constructions. Good correlation is shown between treadwear and a broad range of tire stiffness and test course severities.


Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.


Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.


Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.


2018 ◽  
Author(s):  
Harold Jeffrey M. Consigo ◽  
Ricardo S. Calanog ◽  
Melissa O. Caseria

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.


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