Proceedings of the 2015 International Conference on Microelectronic Test Structures
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9781479983025, 9781479983049

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Observations on substrate characterisation through Coplanar Transmission Line Impedance measurements

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106099 ◽

2015 ◽

Cited By ~ 1

Author(s):

Liam Floyd ◽

John Pike ◽

Jing Tao ◽

Nathan Jackson

Keyword(s):

Transmission Line ◽

Impedance Measurements

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Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106159 ◽

2015 ◽

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Silicon measurements of characteristics for passgate/pull-down/pull-up MOSs and search MOS in a 28 nm HKMG TCAM bitcell

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106140 ◽

2015 ◽

Cited By ~ 1

Author(s):

Koji Nii ◽

Kenji Yamaguchi ◽

Makoto Yabuuchi ◽

Naoya Watanabe ◽

Takumi Hasegawa ◽

...

Keyword(s):

28 Nm

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14nm BEOL TDDB reliability testing and defect analysis

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106094 ◽

2015 ◽

Author(s):

Terence Kane

Keyword(s):

Reliability Testing ◽

Defect Analysis

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[Front and back cover]

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106156 ◽

2015 ◽

Keyword(s):

Back Cover

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Reduction of overhead in adaptive body bias technology due to triple-well structure based on measurement and simulation

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106154 ◽

2015 ◽

Cited By ~ 1

Author(s):

Yasuhiro Ogasahara ◽

Toshihiro Sekigawa ◽

Masakazu Hioki ◽

Tadashi Nakagawa ◽

Toshiyuki Tsutsumi ◽

...

Keyword(s):

Adaptive Body Bias ◽

Body Bias

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Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106121 ◽

2015 ◽

Cited By ~ 4

Author(s):

Vincent Mosser ◽

David Seron ◽

Youcef Haddab

Keyword(s):

Power Law ◽

Threshold Voltage ◽

Extraction Method ◽

Carrier Density ◽

Field Effect ◽

Field Effect Devices

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Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106100 ◽

2015 ◽

Cited By ~ 4

Author(s):

K. Takano ◽

K. Katayama ◽

S. Mizukusa ◽

S. Amakawa ◽

T. Yoshida ◽

...

Keyword(s):

Electromagnetic Field ◽

Millimeter Wave ◽

Process Parameters ◽

Calibration Procedure ◽

Field Analysis

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Design and evaluation of an integrated thin film resistor matching test structure

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106127 ◽

2015 ◽

Cited By ~ 2

Author(s):

Hans Tuinhout ◽

Nicole Wils ◽

Paul Huiskamp ◽

Eelco de Koning

Keyword(s):

Thin Film ◽

Test Structure ◽

Film Resistor ◽

Thin Film Resistor ◽

Matching Test

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Measurement of Vth variation due to STI stress and inverse narrow channel effect at ultra-low voltage in a variability-suppressed process

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106122 ◽

2015 ◽

Author(s):

Yasuhiro Ogasahara ◽

Masakazu Hioki ◽

Tadashi Nakagawa ◽

Toshihiro Sekigawa ◽

Toshiyuki Tsutsumi ◽

...

Keyword(s):

Low Voltage ◽

Narrow Channel ◽

Channel Effect

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Proceedings of the 2015 International Conference on Microelectronic Test Structures
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Observations on substrate characterisation through Coplanar Transmission Line Impedance measurements

Table of contents

Silicon measurements of characteristics for passgate/pull-down/pull-up MOSs and search MOS in a 28 nm HKMG TCAM bitcell

14nm BEOL TDDB reliability testing and defect analysis

[Front and back cover]

Reduction of overhead in adaptive body bias technology due to triple-well structure based on measurement and simulation

Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

Design and evaluation of an integrated thin film resistor matching test structure

Measurement of Vth variation due to STI stress and inverse narrow channel effect at ultra-low voltage in a variability-suppressed process

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Proceedings of the 2015 International Conference on Microelectronic Test StructuresLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Observations on substrate characterisation through Coplanar Transmission Line Impedance measurements

Table of contents

Silicon measurements of characteristics for passgate/pull-down/pull-up MOSs and search MOS in a 28 nm HKMG TCAM bitcell

14nm BEOL TDDB reliability testing and defect analysis

[Front and back cover]

Reduction of overhead in adaptive body bias technology due to triple-well structure based on measurement and simulation

Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

Design and evaluation of an integrated thin film resistor matching test structure

Measurement of Vth variation due to STI stress and inverse narrow channel effect at ultra-low voltage in a variability-suppressed process

Proceedings of the 2015 International Conference on Microelectronic Test Structures
Latest Publications