Proceedings of the 2015 International Conference on Microelectronic Test Structures
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9781479983025, 9781479983049

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Observations on substrate characterisation through Coplanar Transmission Line Impedance measurements

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106099 ◽

2015 ◽

Cited By ~ 1

Author(s):

Liam Floyd ◽

John Pike ◽

Jing Tao ◽

Nathan Jackson

Keyword(s):

Transmission Line ◽

Impedance Measurements

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Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106159 ◽

2015 ◽

Download Full-text

[Front and back cover]

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106156 ◽

2015 ◽

Keyword(s):

Back Cover

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Reduction of overhead in adaptive body bias technology due to triple-well structure based on measurement and simulation

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106154 ◽

2015 ◽

Cited By ~ 1

Author(s):

Yasuhiro Ogasahara ◽

Toshihiro Sekigawa ◽

Masakazu Hioki ◽

Tadashi Nakagawa ◽

Toshiyuki Tsutsumi ◽

...

Keyword(s):

Adaptive Body Bias ◽

Body Bias

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Silicon measurements of characteristics for passgate/pull-down/pull-up MOSs and search MOS in a 28 nm HKMG TCAM bitcell

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106140 ◽

2015 ◽

Cited By ~ 1

Author(s):

Koji Nii ◽

Kenji Yamaguchi ◽

Makoto Yabuuchi ◽

Naoya Watanabe ◽

Takumi Hasegawa ◽

...

Keyword(s):

28 Nm

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14nm BEOL TDDB reliability testing and defect analysis

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106094 ◽

2015 ◽

Author(s):

Terence Kane

Keyword(s):

Reliability Testing ◽

Defect Analysis

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Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106121 ◽

2015 ◽

Cited By ~ 4

Author(s):

Vincent Mosser ◽

David Seron ◽

Youcef Haddab

Keyword(s):

Power Law ◽

Threshold Voltage ◽

Extraction Method ◽

Carrier Density ◽

Field Effect ◽

Field Effect Devices

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Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106100 ◽

2015 ◽

Cited By ~ 4

Author(s):

K. Takano ◽

K. Katayama ◽

S. Mizukusa ◽

S. Amakawa ◽

T. Yoshida ◽

...

Keyword(s):

Electromagnetic Field ◽

Millimeter Wave ◽

Process Parameters ◽

Calibration Procedure ◽

Field Analysis

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Design and evaluation of an integrated thin film resistor matching test structure

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106127 ◽

2015 ◽

Cited By ~ 2

Author(s):

Hans Tuinhout ◽

Nicole Wils ◽

Paul Huiskamp ◽

Eelco de Koning

Keyword(s):

Thin Film ◽

Test Structure ◽

Film Resistor ◽

Thin Film Resistor ◽

Matching Test

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Compact modeling solution of layout dependent effect for FinFET technology

Proceedings of the 2015 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.2015.7106119 ◽

2015 ◽

Cited By ~ 4

Author(s):

David C. Chen ◽

Guan Shyan Lin ◽

Tien Hua Lee ◽

Ryan Lee ◽

Y C Liu ◽

...

Keyword(s):

Compact Modeling ◽

Dependent Effect

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Proceedings of the 2015 International Conference on Microelectronic Test Structures
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Observations on substrate characterisation through Coplanar Transmission Line Impedance measurements

Table of contents

[Front and back cover]

Reduction of overhead in adaptive body bias technology due to triple-well structure based on measurement and simulation

Silicon measurements of characteristics for passgate/pull-down/pull-up MOSs and search MOS in a 28 nm HKMG TCAM bitcell

14nm BEOL TDDB reliability testing and defect analysis

Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

Design and evaluation of an integrated thin film resistor matching test structure

Compact modeling solution of layout dependent effect for FinFET technology

Export Citation Format

Proceedings of the 2015 International Conference on Microelectronic Test StructuresLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Observations on substrate characterisation through Coplanar Transmission Line Impedance measurements

Table of contents

[Front and back cover]

Reduction of overhead in adaptive body bias technology due to triple-well structure based on measurement and simulation

Silicon measurements of characteristics for passgate/pull-down/pull-up MOSs and search MOS in a 28 nm HKMG TCAM bitcell

14nm BEOL TDDB reliability testing and defect analysis

Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

Design and evaluation of an integrated thin film resistor matching test structure

Compact modeling solution of layout dependent effect for FinFET technology

Proceedings of the 2015 International Conference on Microelectronic Test Structures
Latest Publications