Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

2015 ◽  
Author(s):  
Vincent Mosser ◽  
David Seron ◽  
Youcef Haddab
Keyword(s):  
Power Law ◽  
Threshold Voltage ◽  
Extraction Method ◽  
Carrier Density ◽  
Field Effect ◽  
Field Effect Devices

scholarly journals Three-Dimensional Modelling and Simulation Theory of Field Effect Devices

1999 ◽  
Vol 22 (1) ◽  
pp. 1-15
Author(s):  
M. N. Doja ◽  
Moinuddin ◽  
Umesh Kumar
Keyword(s):  
Threshold Voltage ◽  
Size Effects ◽  
Field Effect ◽  
Three Dimensional ◽  
Dimensional Model ◽  
Single Chip ◽  
Three Dimensional Model ◽  
Accurate Analysis ◽  
Field Effect Devices ◽  
Device Size

In recent years, semiconductor manufacturers have been able to steadily reduce the physical area required by devices, thus allowing an increasing number of circuit functions on a single chip. Smaller semiconductor devices require more detailed and accurate analysis because minor errors can degrade their performance substantially.A new, completely numerical three-dimensional model of a MOSFET allows a unified treatment of small devices. Preliminary results show that device size effects the surface potential and threshold voltage. Classical theory does not predict these effects. Although the model currently converges slowly, it can still be useful in analysing new small geometry devices.

scholarly journals HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 446
Author(s):  
Minghui Zhang ◽  
Fang Lin ◽  
Wei Wang ◽  
Feng Wen ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
Source Current ◽  
Effect Transistor ◽  
Source Current Density

In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlOx/Al2O3 bilayer dielectrics is fabricated and characterized. The HfAlOx/Al2O3 bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-terminated diamond two-dimensional hole gas (2DHG) channel. The device demonstrates normally-on characteristics, whose threshold voltage (VTH) is 8.3 V. The maximum drain source current density (IDSmax), transconductance (Gm), capacitance (COX) and carrier density (ρ) are −6.3 mA/mm, 0.73 mS/mm, 0.22 μF/cm2 and 1.53 × 1013 cm−2, respectively.

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

2021 ◽  
pp. 2101036
Author(s):  
Jiali Yi ◽  
Xingxia Sun ◽  
Chenguang Zhu ◽  
Shengman Li ◽  
Yong Liu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Full Range ◽  
Logic Circuits ◽  
Double Gate

Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation

2008 ◽  
Vol 47 (4) ◽  
pp. 3189-3192 ◽  
Author(s):  
Chang Bum Park ◽  
Takamichi Yokoyama ◽  
Tomonori Nishimura ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift

scholarly journals Label-free Electrostatic Detection of DNA Amplification by PCR Using Capacitive Field-effect Devices

2016 ◽  
Vol 168 ◽  
pp. 514-517 ◽  
Author(s):  
A. Poghossian ◽  
T.S. Bronder ◽  
S. Scheja ◽  
C. Wu ◽  
T. Weinand ◽  
...  
Keyword(s):  
Field Effect ◽  
Dna Amplification ◽  
Label Free ◽  
Field Effect Devices

Mos digital‐to‐analog converter employing scaled field effect devices

1981 ◽  
Vol 69 (3) ◽  
pp. 889-889
Author(s):  
Ajay K. Puri ◽  
Michael J. Caruso ◽  
Stanley M. Dennison ◽  
Jay Brown
Keyword(s):  
Field Effect ◽  
Digital To Analog Converter ◽  
Analog Converter ◽  
Field Effect Devices ◽  
Digital To Analog
Sign in / Sign up

Export Citation Format

Share Document