Hot Isostatic Pressing and Gas-Pressure Sintering

2012 ◽  
pp. 171-187 ◽  
Author(s):  
Michael J. Hoffmann ◽  
Stefan Fünfschilling ◽  
Deniz Kahraman
Keyword(s):  
Hot Isostatic Pressing ◽  
Gas Pressure ◽  
Isostatic Pressing ◽  
Gas Pressure Sintering

Hot Isostatic Pressing and Gas-Pressure Sintering

2014 ◽  
pp. 171-187
Author(s):  
Michael J. Hoffmann ◽  
Stefan Fünfschilling ◽  
Deniz Kahraman
Keyword(s):  
Hot Isostatic Pressing ◽  
Gas Pressure ◽  
Isostatic Pressing ◽  
Gas Pressure Sintering

Densification of Ceramics by Gas Overpressure Sintering

1991 ◽  
Vol 251 ◽  
Author(s):  
G. E. Gazza ◽  
R. N. Katz
Keyword(s):  
Process Parameters ◽  
Hot Isostatic Pressing ◽  
Gas Pressure ◽  
Microstructural Development ◽  
Isostatic Pressing ◽  
Advantages And Disadvantages ◽  
Process Sequence ◽  
Gas Pressure Sintering ◽  
Theoretical Considerations

ABSTRACTThe use of various gas pressure sintering (GPS) techniques for densifying ceramics are reviewed for both oxides and non-oxides. Variations of the process are discussed with respect to process parameters selected, process sequence, and microstructural development. Theoretical considerations underlying the technique are presented. GPS and hot isostatic pressing are compared and the advantages and disadvantages of each are briefly discussed.

Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing

2009 ◽  
Vol 421-422 ◽  
pp. 143-147
Author(s):  
Masafumi Kobune ◽  
Hideto Tada ◽  
Hisashi Oshima ◽  
Daisuke Horii ◽  
Akihiro Tamura ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Ferroelectric Properties ◽  
Hot Isostatic Pressing ◽  
Film Surface ◽  
Secondary Phase ◽  
Gas Pressure ◽  
Root Mean Square Roughness ◽  
Isostatic Pressing ◽  
Force Microscopy ◽  
Atomic Force

After depositing amorphous (Bi0.5La0.5)(Ni0.5Ti0.5)O3 (BLNT) films on BLNT seed layer/Pt(100)/ MgO(100) substrates by room-temperature sputtering, the crystallization of the perovskite-struc- tured films has been tried by hot isostatic pressing (HIP). The samples with a single-phase perovskite structure HIP-treated at 800°C for 1 h under gas pressures of 0.51.0 MPa showed good crystallinity of  = 0.960.98 without accompanying the precipitation of the secondary phase. It was confirmed that a large root mean square roughness value of 44.2 nm for the sample HIP-treated at 800°C for 1 h under gas pressure of 0.1 MPa is due to innumerable Bi4Ti3O12-like rod-shaped grains precipitated in the film surface, based on atomic force microscopy. It is shown that the BLNT sample HIP-treated at 800°C for 1 h under gas pressure of 1.0 MPa exhibits the best hysteresis loop shape with a remanent polarization of Pr = 5 C/cm2 and a coercive field of Ec = 150 kV/cm of the six.

Gas pressure combustion sintering and hot isostatic pressing in the Ti-Si-C system

1993 ◽  
Vol 28 (6) ◽  
pp. 1557-1562 ◽  
Author(s):  
H. Klemm ◽  
K. Tanihata ◽  
Y. Miyamoto
Keyword(s):  
Hot Isostatic Pressing ◽  
Gas Pressure ◽  
Isostatic Pressing
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