In-Situ TEM Studies of Vapor- and Liquid-Phase Crystal Growth

ABSTRACTIn-situ TEM investigations during thermal treatment of amorphous Pd81Si19 have been performed. It was found that crystalline nuclei are formed near the perforation edge of the hole produced by electrochemical polishing. After impinging with neighboring crystals, a crystallization front formed which was aligned parallel to the perforation edge. The crystallization front moved in the direction perpendicular to the perforation edge. Crystal growth was found to proceed faster in thinner parts of the specimen than in thicker parts. The results are described qualitatively within a thermodynamic model taking into account volume-, surface- and interfacial free energies and an appropriate specimen geometry.

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Self-Assembled Nanochamber Arrays for in-situ TEM Observation of Liquid-Phase Samples

2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS) ◽

10.1109/memsys.2019.8870760 ◽

2019 ◽

Author(s):

Kitaek Lim ◽

Yuna Bae ◽

Kihwan Kim ◽

Sungho Jeon ◽

Byung Hyo Kim ◽

...

Keyword(s):

Liquid Phase ◽

In Situ Tem ◽

Self Assembled

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In-situ TEM Study of the Crystallization of Thin Films composed of Sb3.6Te with Ge

MRS Proceedings ◽

10.1557/proc-803-hh3.6 ◽

2003 ◽

Vol 803 ◽

Author(s):

Bart J. Kooi ◽

Willemijn M.G. Groot ◽

Jeff Th.M. De Hosson

Keyword(s):

Thin Films ◽

Activation Energy ◽

Electron Microscope ◽

Crystal Growth ◽

Nucleation Rate ◽

Crystallization Behavior ◽

In Situ Tem ◽

Growth Anisotropy ◽

Transmission Electron

ABSTRACTThis paper addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at.% Ge containing Sb3.6Te films (10, 20 and 40 nm thick) as studied using in-situ annealing in a Transmission Electron Microscope (TEM). These materials show growth-dominated crystallization, in contrast to Ge2Sb2Te5 that shows nucleation-dominated crystallization. Particularly the crystal-growth velocity in these systems is measured as a function of temperature from which the activation energy for growth can be derived. The strong effect of the 5 at.% Ge addition on the total crystallization behavior is revealed: Ge increases the crystallization temperature (from 95 to 150 °C), increases the activation energy for growth (from 1.58 to 2.37 eV), increases the nucleation rate and decreases the growth anisotropy.

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