Surface Energy Driven Crystallization of Amorphous Pd81si19

1997 ◽  
Vol 481 ◽  
Author(s):  
Gerhard Schumacher ◽  
Rajeshwar P. Wahi
Keyword(s):  
Crystal Growth ◽  
Thermal Treatment ◽  
Surface Energy ◽  
Thermodynamic Model ◽  
Crystallization Front ◽  
In Situ Tem ◽  
Free Energies ◽  
Electrochemical Polishing ◽  
Interfacial Free Energies

ABSTRACTIn-situ TEM investigations during thermal treatment of amorphous Pd81Si19 have been performed. It was found that crystalline nuclei are formed near the perforation edge of the hole produced by electrochemical polishing. After impinging with neighboring crystals, a crystallization front formed which was aligned parallel to the perforation edge. The crystallization front moved in the direction perpendicular to the perforation edge. Crystal growth was found to proceed faster in thinner parts of the specimen than in thicker parts. The results are described qualitatively within a thermodynamic model taking into account volume-, surface- and interfacial free energies and an appropriate specimen geometry.

Fast Preparation of Ultrathin FIB Lamellas for MEMs-Based In Situ TEM Experiments

2016 ◽  
Vol 850 ◽  
pp. 722-727 ◽  
Author(s):  
Hui Wang ◽  
Shang Gang Xiao ◽  
Qiang Xu ◽  
Tao Zhang ◽  
Henny Zandbergen
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Metallic Alloy ◽  
In Situ Tem ◽  
Ion Milling ◽  
Electrochemical Polishing ◽  
Argon Ion

The preparation of thin lamellas by focused ion beam (FIB) for MEMS-based in situ TEM experiments is time consuming. Typically, the lamellas are of ~5μm*10μm and have a thickness less than 100nm. Here we demonstrate a fast lamellas’ preparation method using special fast cutting by FIB of samples prepared by conventional TEM sample preparation by argon ion milling or electrochemical polishing methods. This method has been applied successfully on various materials, such as ductile metallic alloy Ti68Ta27Al5, brittle ceramics K0.5Na0.5NbO3-6%LiNbO3 and semiconductor Si. The thickness of the lamellas depends on the original TEM sample.

Effect of Modification by WTP-08 on Dispersity of Nanosized CalciumCarbonate and Its Mechanism

2011 ◽  
Vol 688 ◽  
pp. 51-56
Author(s):  
Hao Ding ◽  
Bai Kun Wang ◽  
Ning Liang ◽  
Kun Liu
Keyword(s):  
Free Energy ◽  
Calcium Carbonate ◽  
Surface Energy ◽  
Chemical Method ◽  
Interfacial Free Energy ◽  
Free Energies ◽  
Polar Medium ◽  
Polar Media ◽  
Thermodynamic Effect ◽  
Interfacial Free Energies

The dispersity of nanosized calcium carbonate modified by alkyl amine dimethyl phosphonic acid (WTP-08) through mechano-chemical method in different media was investigated. The modification mechanism was investigated by analyzing the surface energy and its thermodynamic effect on dispersity of nanosized calcium carbonate. The results show that the free energies of nanosized calcium carbonate modified by WTP-08 and its interfacial free energies in air and non-polar media decrease significantly, while the interfacial free energy in water increases remarkably. It can be concluded that modification by WTP-08 improves the dispersion tendency of nanosized calcium carbonate in air and non-polar medium, while it decreases in water. Therefore, modification by WTP-08 makes the dispersity of nanosized calcium carbonate increase in air and non-polar medium and decrease in water.

scholarly journals Nucleation and Crystal Growth of Zn0.3In1.4Sn0.3O3 (ZITO-30) Thin Films Studied by in-situ TEM

2016 ◽  
Vol 22 (S3) ◽  
pp. 840-841 ◽  
Author(s):  
Ran Li ◽  
Mahyar Mohebi Moghadam ◽  
D. Bruce Buchholz ◽  
Peter W. Voorhees ◽  
Vinayak P. Dravid
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
In Situ Tem

Determination of Ag/Co Interfacial Free Energies by Biaxial Zero Creep Experiments

2003 ◽  
Vol 778 ◽  
Author(s):  
Bing An ◽  
Tong-jun Zhang ◽  
Chao Yuan ◽  
Kun Cui ◽  
Wei Zhang
Keyword(s):  
Residual Stress ◽  
Plastic Deformation ◽  
Free Energy ◽  
Room Temperature ◽  
Multilayer Films ◽  
Free Energies ◽  
Grain Distribution ◽  
Interfacial Free Energies

AbstractTo measure the Ag/Co interfacial free energies, biaxial zero creep experiments were performed on Ag/Co multilayer films deposited on the Si (111) wafers. As the samples were heated from room temperature to 450°C, the residual stress in films, which was in situ monitored by substrate curvature technique, decayed gradually to zero due to the increasing plastic deformation in films. After held for several hours at 450°C, they reached a zero creep state while the equilibrium stresses were measured. The annealed element layers were immiscible, and exhibited the column grain distribution and (111) preferred orientations. Based on the Josell model, the free energy of Ag/Co (111) interfaces at 450°C was found to be 1.02 ± 0.17 J/m2.

Formation of Hollow Zinc Oxide by Oxidation and Subsequent Thermal Treatment

2008 ◽  
Vol 135 ◽  
pp. 11-14 ◽  
Author(s):  
Jung Goo Lee ◽  
Ryusuke Nakamura ◽  
Daisuke Tokozakura ◽  
Hideo Nakajima ◽  
Hirotaro Mori ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Thermal Treatment ◽  
Oxide Layer ◽  
Room Temperature ◽  
Carbon Film ◽  
In Situ Tem ◽  
Zinc Vapor ◽  
Amorphous Carbon Film ◽  
Subsequent Thermal Treatment

The formation of hollow zinc oxide has been studied by oxidation and subsequent thermal treatment of nanometer-sized zinc particles using in-situ TEM. The zinc particles produced under UHV condition were exposed to air at room temperature for 0.6 ks, which resulted in the formation of oxide layer with thickness of 3 nm. Subsequent heating inside UHV chamber of TEM induced the evaporation of the inner zinc, which resulted in the formation of hollow zinc oxide. The produced hollow zinc oxide had the wurtzite structure. Based upon the vapor pressure of the inner zinc, it seems reasonable to consider that the internal zinc vapor leaks away through the interface between the oxide layer and the amorphous carbon film used as a supporting substrate.

In-situ TEM Study of the Crystallization of Thin Films composed of Sb3.6Te with Ge

2003 ◽  
Vol 803 ◽  
Author(s):  
Bart J. Kooi ◽  
Willemijn M.G. Groot ◽  
Jeff Th.M. De Hosson
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electron Microscope ◽  
Crystal Growth ◽  
Nucleation Rate ◽  
Crystallization Behavior ◽  
In Situ Tem ◽  
Growth Anisotropy ◽  
Transmission Electron

ABSTRACTThis paper addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at.% Ge containing Sb3.6Te films (10, 20 and 40 nm thick) as studied using in-situ annealing in a Transmission Electron Microscope (TEM). These materials show growth-dominated crystallization, in contrast to Ge2Sb2Te5 that shows nucleation-dominated crystallization. Particularly the crystal-growth velocity in these systems is measured as a function of temperature from which the activation energy for growth can be derived. The strong effect of the 5 at.% Ge addition on the total crystallization behavior is revealed: Ge increases the crystallization temperature (from 95 to 150 °C), increases the activation energy for growth (from 1.58 to 2.37 eV), increases the nucleation rate and decreases the growth anisotropy.

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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