In-situ TEM Study of the Crystallization of Thin Films composed of Sb3.6Te with Ge

2003 ◽  
Vol 803 ◽  
Author(s):  
Bart J. Kooi ◽  
Willemijn M.G. Groot ◽  
Jeff Th.M. De Hosson
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electron Microscope ◽  
Crystal Growth ◽  
Nucleation Rate ◽  
Crystallization Behavior ◽  
In Situ Tem ◽  
Growth Anisotropy ◽  
Transmission Electron

ABSTRACTThis paper addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at.% Ge containing Sb3.6Te films (10, 20 and 40 nm thick) as studied using in-situ annealing in a Transmission Electron Microscope (TEM). These materials show growth-dominated crystallization, in contrast to Ge2Sb2Te5 that shows nucleation-dominated crystallization. Particularly the crystal-growth velocity in these systems is measured as a function of temperature from which the activation energy for growth can be derived. The strong effect of the 5 at.% Ge addition on the total crystallization behavior is revealed: Ge increases the crystallization temperature (from 95 to 150 °C), increases the activation energy for growth (from 1.58 to 2.37 eV), increases the nucleation rate and decreases the growth anisotropy.

scholarly journals Nitrogen Effects on Crystallization Kinetics of Amorphous TiOxNy Thin Films

2002 ◽  
Vol 17 (3) ◽  
pp. 550-555 ◽  
Author(s):  
Kyle Hukari ◽  
Rand Dannenberg ◽  
E. A. Stach
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Activation Energy ◽  
Crystallization Behavior ◽  
Index Of Refraction ◽  
Transmission Electron ◽  
Growth Activation ◽  
Diffraction Patterns ◽  
Kinetics Of

The crystallization behavior of amorphous TiOxNy (x ≫ y) thin films was investigated by in situ transmission electron microscopy. The Johnson–Mehl–Avrami–Kozolog (JMAK) theory was used to determine the Avrami exponent, activation energy, and the phase velocity pre-exponent. Addition of nitrogen inhibited diffusion, increasing the nucleation temperature, while decreasing the growth activation energy. Kinetic variables extracted from individual crystallites were compared to JMAK analysis of the fraction transformed, and a change of 6% in the activation energy led to agreement between the methods. From diffraction patterns and index of refraction the crystallized phase was found to be predominantly anatase.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

scholarly journals Donald William Pashley. 21 April 1927 — 16 May 2009

2010 ◽  
Vol 56 ◽  
pp. 317-340 ◽  
Author(s):  
Bruce A. Joyce ◽  
Michael J. Stowell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
Disorder Effects ◽  
Transmission Electron ◽  
Innovative Materials ◽  
Low Dimensional

Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.

Insights into the growth of bismuth nanoparticles on 2D structured BiOCl photocatalysts: an in situ TEM investigation

2015 ◽  
Vol 44 (36) ◽  
pp. 15888-15896 ◽  
Author(s):  
Xiaofeng Chang ◽  
Shuangbao Wang ◽  
Qi Qi ◽  
Mohammed A. Gondal ◽  
Siddique G. Rashid ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
In Situ Tem ◽  
Bismuth Nanoparticles ◽  
Transmission Electron

The formation and growth of bismuth nanoparticles onto BiOCl have been directly observed and characterized using a transmission electron microscope.

In situ TEM crystallization of sol-gel derived BaTiO3 thin films

1994 ◽  
Vol 52 ◽  
pp. 588-589
Author(s):  
Martha L. Mecartney ◽  
M. C. Gust ◽  
N. D. Evans
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
In Situ Tem ◽  
Lattice Match ◽  
Gel Layer ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Good Lattice ◽  
Thick Layers

BaTiO3 thin films made by the sol-gel process require a crystallization heat treatment to transform the amorphous gel into a crystalline material. This work used a Ba-Ti methoxypropoxide precursor in a 0.25M solution of methoxypropanol which was spin coated as 5 (each -600 nm thick) layers on (100) Si (FIG. 1). The {100} planes of perovskite BaTiO3 have a good lattice match with {110} Si; d110 of Si = 0.38 nm, and d100 of BaTiO3 = 0.4 nm. Consequently, it should be possible to grow heteroepitaxial films of (100) BaTiO3 on (100) Si. Such samples pyrolized at 350.C and then annealed in a conventional furnace at 750°C for one hour, however, did not crystallize heteroepitaxially with the substrate. Rather, crystallization occurred by a nucleation and growth process from within the gel. Furthermore, the gel layer at the Si/BaTiO3 interface remained amorphous. In-situ hot stage experiments were conducted in a transmission electron microscope (TEM) to determine the nucleation and crystallization behavior.

Grain Boundary Responses to Local and Applied Stress: An In Situ TEM Deformation Study

2006 ◽  
Vol 976 ◽  
Author(s):  
Bryan Miller ◽  
Jamey Fenske ◽  
Dong Su ◽  
Chung-Ming Li ◽  
Lisa Dougherty ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Grain Growth ◽  
Transmission Electron Microscope ◽  
In Situ Tem ◽  
Deformation Twins ◽  
Transmission Electron ◽  
Dislocation Interactions

AbstractDeformation experiments at temperatures between 300 and 750 K have been performed in situ in the transmission electron microscope to investigate dislocation interactions and reactions with grain boundaries and other obstacles. Dislocations, both partial and perfect, as well as deformation twins have been observed being emitted from grain boundaries and, in some cases, even the same grain boundary. The ejection of dislocations from the grain boundary can result in its partial or total annihilation. In the latter case, the disintegration of the grain boundary was accompanied by grain growth and a change in misorientation.

In Situ Ultrahigh Vacuum Transmission Electron Microscope Investigations of Dynamical Changes of Nanostructures on Silicon

2006 ◽  
Vol 46 ◽  
pp. 111-119 ◽  
Author(s):  
Lih Juann Chen ◽  
Wen Wei Wu ◽  
C.H. Liu
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ultrahigh Vacuum ◽  
In Situ Tem ◽  
Dynamic Changes ◽  
Directed Movement ◽  
Precise Knowledge ◽  
Transmission Electron ◽  
Unique Capability

In situ ultrahigh vacuum transmission electron microscope (TEM) is a powerful tool to investigate the dynamic changes of nanostructures on silicon. By observing growth and phase transitions in situ, understanding of their mechanisms can be used to model relevant processes. With the precise knowledge of the changes occurred on an atomic level, accurate control of the growth process can be achieved. The dynamical changes occurred on the nano scale are often unexpected, which also underscores the importance of the approach. In this presentation, we highlight two examples to demonstrate the unique capability of in situ TEM to study the dynamical changes. The examples include collective movement of Au nanoparticles and directed movement of Au-Si droplets on Si bi-crystal.

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