High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence
2018 ◽
Vol 28
(28)
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pp. 1800340
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2017 ◽
Vol 9
(3)
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pp. 2711-2719
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2018 ◽
Vol 28
(28)
◽
pp. 1870193
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2019 ◽
Vol 7
(32)
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pp. 9966-9974
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2017 ◽
Vol 5
(6)
◽
pp. 1452-1462
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