scholarly journals Thickness Scaling Effects on the Complex Optical Conductivity of Few‐Layer WSe 2 Investigated by Spectroscopic Ellipsometry

2022 ◽  
pp. 2100299
Author(s):  
Mingsheng Fang ◽  
Honggang Gu ◽  
Baokun Song ◽  
Zhengfeng Guo ◽  
Shiyuan Liu
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Optical Conductivity ◽  
Scaling Effects

Compositional dependence of the optical conductivity of Ni1−xPtx alloys (0

2014 ◽  
Vol 571 ◽  
pp. 484-489 ◽  
Author(s):  
Lina S. Abdallah ◽  
Stefan Zollner ◽  
Christian Lavoie ◽  
Ahmet Ozcan ◽  
Mark Raymond
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Optical Conductivity ◽  
Compositional Dependence

Optical conductivity of Ni1−xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometry

2014 ◽  
Vol 32 (5) ◽  
pp. 051210
Author(s):  
Lina S. Abdallah ◽  
Stefan Zollner ◽  
Christian Lavoie ◽  
Ahmet S. Ozcan ◽  
Mark Raymond
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Optical Conductivity

GROWTH CHARACTERIZATION OF a Si:H FILMS BY MULTIPLE ANGLE OF INCIDENCE SPECTROSCOPIC ELLIPSOMETRY

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-247-C10-251
Author(s):  
J. Perrin ◽  
B. Drevillon
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Angle Of Incidence ◽  
Growth Characterization

Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2

1991 ◽  
Author(s):  
V. A. Yakovlev ◽  
E. A. Irene
Keyword(s):  
Spectroscopic Ellipsometry

Scaling Effects on Stern Flap Performance. Progress Report

2009 ◽  
Author(s):  
Dominic S. Cusanelli
Keyword(s):  
Progress Report ◽  
Scaling Effects
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