Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

scholarly journals Ultra-thin oxide breakdown for OTP development in power technologies

2020 ◽  
Author(s):  
Osvaldo Gasparri ◽  
Mirko Bernardoni ◽  
Paolo Del Croce ◽  
Andrea Baschirotto
Keyword(s):  
Oxide Layer ◽  
Applied Voltage ◽  
Performance Optimization ◽  
Oxide Thickness ◽  
Physical Models ◽  
Electrical Performance ◽  
Physical Analysis ◽  
Oxide Breakdown ◽  
Thin Oxide ◽  
Area Occupation

Abstract OTP (One Time Programmable) memory in power technology enables electrical performance optimization together with area occupation reduction. In this paper, the aspects relative to the oxide breakdown (which is the key mechanism for memory programmability) are studied and applied to the development of an antifuse OTP cell in a 350 nm-CMOS power technology. The physical analysis of the degradation phases of an oxide layer is presented together with the physical models, exploited to foresee the device time-to-breakdown depending on applied voltage, oxide thickness etc. The achieved results are used in the development and reliable implementation of OTP cells in the target 350 nm-CMOS node.

Performance Quality, Sensitivity, and Tolerance Specification of Mechanisms

1994 ◽  
Author(s):  
Kwun-Lon Ting ◽  
Yufeng Long
Keyword(s):  
Signal To Noise Ratio ◽  
Rayleigh Quotient ◽  
Sensitivity Index ◽  
Signal To Noise ◽  
Mechanism Synthesis ◽  
Performance Quality ◽  
Mechanical Assemblies ◽  
Tolerance Specification ◽  
Position Synthesis ◽  
The Ideal

Abstract By employing Taguchi’s concept to mechanism synthesis, this paper presents the theory and technique to identify a robust design, which is the least sensitive to the tolerances, for mechanisms and to determine the tolerance specification for the best performance and manufacturability. The method is demonstrated in finite and infinitesimal position synthesis. The sensitivity Jacobian is first introduced to relate the performance tolerances and the dimensional tolerances. The Rayleigh quotient of the sensitivity Jacobian, which is equivalent to Taguchi’s signal to noise ratio, is then used to define the performance quality and a sensitivity index is introduced to measure the sensitivity of the performance quality to the dimensional tolerances for the whole system. The ideal tolerance specification is obtained in closed form. It shows how the tolerance specification affects the performance quality and that the performance quality can be significantly improved by tightening a key tolerance while loosening the others. The theory is general and the technique is readily adaptable to almost any form and type of mechanical system, including multiple-loop linkages and mechanical assemblies or even structures.

Material Property of a Passive Oxide Formed on Alloy 600

2007 ◽  
Vol 26-28 ◽  
pp. 937-940 ◽  
Author(s):  
Dong Jin Kim ◽  
Hyuk Chul Kwon ◽  
Seong Sik Hwang ◽  
Hong Pyo Kim
Keyword(s):  
Corrosion Resistance ◽  
Oxide Layer ◽  
Passive Film ◽  
Electrochemical Impedance ◽  
Oxide Films ◽  
Oxide Thickness ◽  
Solution Temperature ◽  
Alloy 600 ◽  
Pressurized Water ◽  
Electrochemical Behaviors

Alloy 600 is used as a material for a steam generator tubing in pressurized water reactors(PWR) due to its high corrosion resistance under a PWR environment. In spite of its corrosion resistance, a stress corrosion cracking(SCC) has occurred on the primary side as well as the secondary side of a tubing. It is known that a SCC is related to the electrochemical behaviors of an anodic dissolution and a passivation of a bare surface of metals and alloys. Therefore in the present work, the passive oxide films on Alloy 600 have been investigated as a function of the solution temperature by using a potentiodynamic polarization, electrochemical impedance spectroscopy and a TEM, equipped with EDS. Moreover the semiconductive property was evaluated by using the Mott-Schottky relation. It was found that the passivity depends on the chemical composition and the densification of the oxide film rather than the oxide thickness. As the solution temperature of 0.5M H3BO3 increased, the thickness of the passive film increased but the oxide resistance of the passive film was decreased, indicating that the measured current in the passive region of the potentiodynamic curve is closely related to the stability of the passive film rather than the oxide thickness. It was found that the oxide films were composed of an outer oxide layer with a lower resistance and an inner oxide layer with a relatively higher resistance. From the Mott-Schottky relation, the oxide formed at 300oC showed a p-type semiconductor property unlike the n-type oxide films up to 250oC.

A Comparison of Tunneling Through Thin Oxide Layers on Step-free and Normal Si Surfaces

2002 ◽  
Vol 747 ◽  
Author(s):  
Antonio C. Oliver ◽  
Jack M. Blakely
Keyword(s):  
Thermal Oxidation ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Oxide Surface ◽  
Interface Morphology ◽  
Device Structure ◽  
Atomic Steps ◽  
Surface And Interface ◽  
Step Density

ABSTRACTSurface and interface morphology may play an important role in the electrical performance of metal-oxide-semiconductor (MOS) devices with small characteristic dimensions. In previous work we showed how steps on the silicon surface influence the Si-SiO2 interface morphology and the outer oxide surface morphology following thermal oxidation [1]. The Si-SiO2 interface morphology is largely determined by the starting silicon substrate step distribution and atomic steps at the Si surface cause an inherent variation in oxide thickness after thermal oxidation. In the present study we report how roughness caused by increased interfacial step density may affect the electronic tunneling characteristics of an MOS device structure. To determine the extent to which the step morphology plays a role in the tunneling behavior of such devices, similar arrays of capacitors were fabricated on both Si surfaces with reduced step density and surfaces which had not undergone any special surface step removal treatment. The leakage currents due to tunneling for the two types of capacitors were measured and compared. Atomic steps cause an effective decrease in oxide thickness in those capacitors without reduced step density and this leads to increased leakage current.

scholarly journals THE COMPARATIVE RESISTANCE OF BACTERIA AND HUMAN TISSUE CELLS TO CERTAIN COMMON ANTISEPTICS

1916 ◽  
Vol 24 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Robert A. Lambert
Keyword(s):  
Hydrogen Peroxide ◽  
Staphylococcus Aureus ◽  
Connective Tissue ◽  
Human Tissue ◽  
Tissue Cultures ◽  
Mercuric Iodide ◽  
Living Body ◽  
Tissue Cells ◽  
The One ◽  
The Ideal

The comparative resistance of bacteria and human tissue cells to antiseptics and other chemicals may be easily tested by tissue cultures under conditions which approximate those found in the living body. A comparative study shows that while human cells (connective tissue and wandering cells) are highly resistant to many antiseptics, they are in general more easily killed than bacteria (Staphylococcus aureus). Of the antiseptics tested, which include mercuric chloride, iodine, potassium mercuric iodide, phenol, tricresol, hydrogen peroxide, hypochlorites (Dakin's solution), argyrol, and alcohol, the one which approaches most closely the ideal disinfectant is iodine, which kills bacteria in strengths that do not seriously injure connective tissue cells or wandering cells.

Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

2020 ◽  
Vol 1014 ◽  
pp. 144-148
Author(s):  
Ling Sang ◽  
Jing Hua Xia ◽  
Liang Tian ◽  
Fei Yang ◽  
Rui Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Oxidation Process ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Field Plate ◽  
Plate Length ◽  
Field Oxide

The effect of the field oxidation process on the electrical characteristics of 6500V 4H-SiC JBS diodes is studied. The oxide thickness and field plate length have an effect on the reverse breakdown voltage of the SiC JBS diode. According the simulation results, we choose the optimal thickness of the oxide layer and field plate length of the SiC JBS diode. Two different field oxide deposition processes, which are plasma enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD), are compared in our paper. When the reverse voltage is 6600V, the reverse leakage current of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 0.7 μA, which is 60% lower than that of PECVD process. When the forward current is 25 A, the forward voltage of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 3.75 V, which is 10% higher than that of PECVD process. There should be a trade-off between the forward and reverse characteristics in the actual high power and high temperature applications.

scholarly journals Looking for the “Dream Catalyst” for Hydrogen Peroxide Production from Hydrogen and Oxygen

Catalysts ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 251 ◽  
Author(s):  
Federica Menegazzo ◽  
Michela Signoretto ◽  
Elena Ghedini ◽  
Giorgio Strukul
Keyword(s):  
Hydrogen Peroxide ◽  
Heterogeneous Catalysts ◽  
Direct Synthesis ◽  
Particle Morphology ◽  
Synthetic Methods ◽  
Side Reactions ◽  
Catalyst Morphology ◽  
And Performance ◽  
The Ideal

The reaction between hydrogen and oxygen is in principle the simplest method to form hydrogen peroxide, but it is still a “dream process”, thus needing a “dream catalyst”. The aim of this review is to analyze critically the different heterogeneous catalysts used for the direct synthesis of H2O2 trying to determine the features that the ideal or “dream catalyst” should possess. This analysis will refer specifically to the following points: (i) the choice of the metal; (ii) the metal promoters used to improve the activity and/or the selectivity; (iii) the role of different supports and their acidic properties; (iv) the addition of halide promoters to inhibit undesired side reactions; (v) the addition of other promoters; (vi) the effects of particle morphology; and (vii) the effects of different synthetic methods on catalyst morphology and performance.

In-line Characterization of Thin Polysilicon Films by Variable Angle Spectroscopic Ellipsometry

2000 ◽  
Vol 609 ◽  
Author(s):  
S. Paprotta ◽  
K. S. Röver ◽  
R. Ferretti ◽  
U. Höhne ◽  
J. D. Kähler ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Complex Refractive Index ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Interface Layer ◽  
Parameter Determination ◽  
Variable Angle ◽  
Air Interface ◽  
Polysilicon Films ◽  
Variable Angle Spectroscopic Ellipsometry

ABSTRACTUp to now an in-line method for parameter determination of deposited thin polysilicon films is not available. In this paper a method for monitoring the polysilicon deposition process in device manufacturing by variable angle spectroscopic ellipsometry (VASE) is demonstrated. Therefore several polysilicon films are deposited on thermally oxidized [100] silicon wafers. These samples are characterized by VASE in the optical range of 450 - 850 nm. Parameters are determined by simulation using a multilayer model consisting of air, interface layer (surface roughness), polysilicon, SiO2 and silicon substrate. Different optical models representing the properties of polysilicon are tested. The free parameters are the oxide thickness, the composition and the thickness of the interface layer (air, polysilicon) as well as the thickness and the complex refractive index of the polysilicon layer. Results of the spectroscopic analysis are verified by AFM and SEM measurements. It can be shown that parameters of the deposited polysilicon films, which often could only be determined by complex and destructive off-line analysis methods are also accessible by non-destructive in-line VASE measurements.

The influence of oxide and adsorbates on the nanomechanical response of silicon surfaces

2000 ◽  
Vol 15 (2) ◽  
pp. 546-553 ◽  
Author(s):  
S. A. Syed Asif ◽  
K. J. Wahl ◽  
R. J. Colton
Keyword(s):  
Oxide Layer ◽  
Mechanical Response ◽  
Surface Preparation ◽  
Oxide Thickness ◽  
Silicon Surfaces ◽  
Depth Sensing ◽  
Hydrophilic Surfaces ◽  
Surface Oxides ◽  
Tip Radius ◽  
Substrate Influence

In this article we report the influence of surface oxides and relative humidity on the nanomechanical response of hydrophobic and hydrophilic Si surfaces. Depth-sensing nanoindentation combined with force modulation enabled measurement of surface forces, surface energy, and interaction stiffness prior to contact. Several regimes of contact were investigated: pre-contact, apparent contact, elastic contact, and elasto-plastic contact. Both humidity and surface preparation influenced the surface mechanical properties in the pre- and apparent-contact regimes. Meniscus formation was observed for both hydrophobic and hydrophilic surfaces at high humidity. Influence of humidity was much less pronounced on hydrophobic surfaces and was fully reversible. In the elastic and elasto-plastic regimes, the mechanical response was dependent on oxide layer thickness. Irreversibility at small loads (300 nN) was due to the deformation of the surface oxide. Above 1 μN, the deformation was elastic until the mean contact pressure reached 11 GPa, whereby Si underwent a pressure-induced phase transformation resulting in oxide layer pop-in and breakthrough. The critical load required for pop-in was dependent on oxide thickness and tip radius. For thicker oxide layers, substrate influence was reduced and plastic deformation occurred within the oxide film itself without pop-in. Elastic modulus and hardness of both the oxide layer and Si substrate were measured quantitatively for depths <5 nm.

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