The review deals with issues related to the principle of operation of resistive semiconductor gas sensors and the use of light activation instead of thermal heating when detecting gases. Information on the photoelectric and optical properties of nanocrystalline oxides SnO2, ZnO, In2O3, and WO3, which are the most widely used sensitive materials for semiconductor gas sensors, is presented. The activation of the gas sensitivity of semiconductor materials by both UV and visible light is considered. When activated by UV light, the typical approaches for creating materials are (i) the use of individual metal oxides, (ii) chemical modification with nanoparticles of noble metals and their oxides, (iii) and the creation of nanocomposite materials based on metal oxides. In the case of visible light activation, the approaches used to enhance the photo- and gas sensitivity of wide-gap metal oxides are (i) doping; (ii) spectral sensitization using dyes, narrow-gap semiconductor particles, and quantum dots; and (iii) addition of plasmon nanoparticles. Next, approaches to the description of the mechanism of the sensor response of semiconductor sensors under the action of light are considered.
Light‐Activated Gas Sensors: Optically Activated 3D Thin‐Shell TiO
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for Super‐Sensitive Chemoresistive Responses: Toward Visible Light Activation (Adv. Sci. 3/2021)
