Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

2022 ◽  
pp. 2101062
Author(s):  
Sungju Choi ◽  
Jingyu Park ◽  
Seong‐Hyun Hwang ◽  
Changwook Kim ◽  
Yong‐Sung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Positive Bias ◽  
Bias Stress ◽  
Model Based ◽  
Excessive Oxygen ◽  
Model Based Analysis ◽  
Negative Bias Illumination Stress

Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane

2014 ◽  
Vol 1633 ◽  
pp. 139-144 ◽  
Author(s):  
Juan Paolo Bermundo ◽  
Yasuaki Ishikawa ◽  
Haruka Yamazaki ◽  
Toshiaki Nonaka ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Reactive Ion Etching ◽  
Annealing Treatment ◽  
Negative Bias ◽  
Positive Bias ◽  
Ion Etching ◽  
Bias Stress ◽  
Passivation Layers ◽  
Negative Bias Illumination Stress

ABSTRACTPolysilsesquioxane passivation layers were used to passivate bottom gate a-InGaZnO (a-IGZO) thin film transistors (TFT). The a-IGZO TFTs passivated with polysilsesquioxane showed highly stable behavior during positive bias stress, negative bias stress, and negative bias illumination stress. A voltage threshold shift of up to 0.1 V, less than -0.1 V and -2.3 V for positive bias stress, negative bias stress, and negative bias illumination stress, respectively. We also report the effect of reactive ion etching (RIE) on the electrical characteristics of a-InGaZnO (a-IGZO) thin-film transistors (TFT) passivated with the polysilsesquioxane-based passivation layers. We show how post-annealing treatment using two different atmosphere conditions: under O2 ambient and combination of N2 and O2 ambient (20% O2), can be performed to recover the initial characteristics. Furthermore, we present a highly stable novel polysilsesquioxane photosensitive passivation material that can be used to completely circumvent the reactive ion etching effects.

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

2017 ◽  
Vol 111 (7) ◽  
pp. 073506 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Hsiao-Cheng Chiang ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

P-5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide

2016 ◽  
Vol 47 (1) ◽  
pp. 1136-1139
Author(s):  
Sung Pyo Park ◽  
Hong Jae Kim ◽  
Young Jun Tak ◽  
Seonghwan Hong ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Effect of Bandgap Widening on Negative-Bias Illumination Stress Stability of Oxide Thin-Film Transistors

2021 ◽  
Vol 68 (9) ◽  
pp. 4450-4454
Author(s):  
Caihao Deng ◽  
Linfeng Lan ◽  
Penghui He ◽  
Yaping Li ◽  
Xiao Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Negative Bias Illumination Stress

Stability of zinc nitride thin-film transistors under positive and negative bias stress

2020 ◽  
Vol 171 ◽  
pp. 107841
Author(s):  
Miguel A. Dominguez ◽  
Jose Luis Pau ◽  
Andrés Redondo-Cubero
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Zinc Nitride

Abnormal Negative Bias Stress Instability of Amorphous InGaZnO Thin Film Transistors

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1918-1918
Author(s):  
Chia-Chun Yen ◽  
Chieh Lo ◽  
Yu-Chieh Liu ◽  
Chun-Hung Yeh ◽  
Cheewee Liu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Amorphous Ingazno

scholarly journals Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

2019 ◽  
Vol 10 ◽  
pp. 1125-1130 ◽  
Author(s):  
Dapeng Wang ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Temperature Treatment ◽  
Treatment Temperature ◽  
Negative Bias ◽  
Indium Gallium Zinc Oxide ◽  
Negative Bias Illumination Stress

This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device. The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT.

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