P-5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide

2016 ◽  
Vol 47 (1) ◽  
pp. 1136-1139
Author(s):  
Sung Pyo Park ◽  
Hong Jae Kim ◽  
Young Jun Tak ◽  
Seonghwan Hong ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

2016 ◽  
Vol 108 (3) ◽  
pp. 033502 ◽  
Author(s):  
Yu-Hong Chang ◽  
Ming-Jiue Yu ◽  
Ruei-Ping Lin ◽  
Chih-Pin Hsu ◽  
Tuo-Hung Hou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Positive Bias ◽  
Bias Stress ◽  
Al2o3 Gate Dielectric

Improvement in Negative Bias Stress Stability of Solution-Processed Amorphous In–Ga–Zn–O Thin-Film Transistors Using Hydrogen Peroxide

2014 ◽  
Vol 6 (5) ◽  
pp. 3371-3377 ◽  
Author(s):  
Jeong Moo Kwon ◽  
Joohye Jung ◽  
You Seung Rim ◽  
Dong Lim Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Solution Processed ◽  
Bias Stress ◽  
Stability Of Solution

P-25: Enhancement in Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors with Vertically Graded-Oxygen-Vacancy Active Layer

2015 ◽  
Vol 46 (1) ◽  
pp. 1209-1212
Author(s):  
Yeong-gyu Kim ◽  
Seokhyun Yoon ◽  
Seonghwan Hong ◽  
Jong Sun Choi ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

scholarly journals Highly stable amorphous zinc tin oxynitride thin film transistors under positive bias stress

2017 ◽  
Vol 111 (12) ◽  
pp. 122109 ◽  
Author(s):  
K. M. Niang ◽  
B. C. Bayer ◽  
J. C. Meyer ◽  
A. J. Flewitt
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress
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