Graphene Quantum Dots Probed by Scanning Tunneling Microscopy

2017 ◽  
Vol 529 (11) ◽  
pp. 1700018 ◽  
Author(s):  
Markus Morgenstern ◽  
Nils Freitag ◽  
Alexander Nent ◽  
Peter Nemes-Incze ◽  
Marcus Liebmann
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Graphene Quantum Dots ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Study of Single Silicon Quantum Dots’ Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy

Nano Letters ◽  
2008 ◽  
Vol 8 (6) ◽  
pp. 1689-1694 ◽  
Author(s):  
Bashir Zaknoon ◽  
Gad Bahir ◽  
Cecile Saguy ◽  
Rachel Edrei ◽  
Alon Hoffman ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Band Gap ◽  
Room Temperature ◽  
Single Electron ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Silicon Quantum Dots ◽  
Temperature Scanning

1-BIT FULL ADDER IMPLEMENTATION USING SINGLE SPIN LOGIC PARADIGM

SPIN ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1250012 ◽  
Author(s):  
SOUMITRA SHUKLA ◽  
BAHNIMAN GHOSH ◽  
MOHAMMAD WASEEM AKRAM
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Full Adder ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Single Spin ◽  
Transmission Gate ◽  
Spin Logic ◽  
Spin Polarized ◽  
Fair Comparison

This paper presents the implementation of important full adder circuits using quantum dots (QDs) and Spin Polarized Scanning Tunneling Microscopy (SPSTM) in Single Spin Logic (SSL) paradigm. A fair comparison among these adders shows that the mirror adder implementation in SSL paradigm does not carry any advantage over the CMOS adder in terms of complexity and number of QDs, opposite to the trend observed in their charge-based counterparts. On the contrary, the transmission gate adder, static and dynamic Manchester carry gate adders in SSL reduces the complexity and number of QDs, in harmony with the trend shown in transistor adders.

Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots

1997 ◽  
Vol 71 (8) ◽  
pp. 1083-1085 ◽  
Author(s):  
Warren Wu ◽  
John R. Tucker ◽  
Glenn S. Solomon ◽  
James S. Harris
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Inas Quantum Dots

scholarly journals Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

2004 ◽  
Vol 85 (23) ◽  
pp. 5697-5699 ◽  
Author(s):  
Q. Gong ◽  
P. Offermans ◽  
R. Nötzel ◽  
P. M. Koenraad ◽  
J. H. Wolter
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy

2003 ◽  
Vol 248 ◽  
pp. 322-327 ◽  
Author(s):  
H. Eisele ◽  
A. Lenz ◽  
Ch. Hennig ◽  
R. Timm ◽  
M. Ternes ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals Low-temperature scanning tunneling microscopy of selfassembled inas quantum dots grown by droplet epitaxy

2010 ◽  
Vol 3 (2) ◽  
pp. 1299-1304
Author(s):  
C. Durand ◽  
A. Peilloux ◽  
K. Suzuki ◽  
K. Kanisawa ◽  
B. Grandidier ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Droplet Epitaxy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Inas Quantum Dots ◽  
Temperature Scanning

Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

1998 ◽  
Author(s):  
C.K. Harnett ◽  
S. Evoy ◽  
H.G. Craighead ◽  
K. Pond ◽  
J. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional
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