Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study

Mapping Intimacies ◽

10.1063/1.2729793 ◽

2007 ◽

Author(s):

Y. Akanuma ◽

I. Yamakawa ◽

Y. Sakuma ◽

T. Usuki ◽

A. Nakamura

Keyword(s):

Quantum Dots ◽

Scanning Tunneling Microscopy ◽

Microscopy Study ◽

Interfacial Structure ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Inp Quantum Dots ◽

Scanning Tunneling Microscopy Study ◽

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Scanning tunneling microscopy study of interfacial structure of InAs quantum dots on InP(001) grown by a double-cap method

Applied Physics Letters ◽

10.1063/1.2710470 ◽

2007 ◽

Vol 90 (9) ◽

pp. 093112 ◽

Author(s):

Y. Akanuma ◽

I. Yamakawa ◽

Y. Sakuma ◽

T. Usuki ◽

A. Nakamura

Keyword(s):

Quantum Dots ◽

Scanning Tunneling Microscopy ◽

Microscopy Study ◽

Interfacial Structure ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Inas Quantum Dots ◽

Scanning Tunneling Microscopy Study ◽

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Cross‐sectional scanning tunneling microscopy study of GaAs/AlAs short period superlattices: The influence of growth interrupt on the interfacial structure

Applied Physics Letters ◽

10.1063/1.114062 ◽

1995 ◽

Vol 66 (4) ◽

pp. 478-480 ◽

Author(s):

A. R. Smith ◽

Kuo‐Jen Chao ◽

C. K. Shih ◽

Y. C. Shih ◽

B. G. Streetman

Keyword(s):

Scanning Tunneling Microscopy ◽

Microscopy Study ◽

Interfacial Structure ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Short Period ◽

Short Period Superlattices ◽

Scanning Tunneling Microscopy Study

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Cross-sectional scanning tunneling microscopy study of InGaAs quantum dots on GaAs(001) grown by heterogeneous droplet epitaxy

Applied Physics Letters ◽

10.1063/1.1479196 ◽

2002 ◽

Vol 80 (23) ◽

pp. 4345-4347 ◽

Author(s):

N. Liu ◽

H. K. Lyeo ◽

C. K. Shih ◽

M. Oshima ◽

T. Mano ◽

...

Keyword(s):

Quantum Dots ◽

Scanning Tunneling Microscopy ◽

Microscopy Study ◽

Droplet Epitaxy ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Scanning Tunneling Microscopy Study

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Double capping of molecular beam epitaxy grown InAs∕InP quantum dots studied by cross-sectional scanning tunneling microscopy

Applied Physics Letters ◽

10.1063/1.2771063 ◽

2007 ◽

Vol 91 (7) ◽

pp. 073106 ◽

Author(s):

J. M. Ulloa ◽

P. M. Koenraad ◽

E. Gapihan ◽

A. Létoublon ◽

N. Bertru

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Inp Quantum Dots

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Defect structure ofGa1−xMnxAs: A cross-sectional scanning tunneling microscopy study

Physical Review B ◽

10.1103/physrevb.70.085411 ◽

2004 ◽

Vol 70 (8) ◽

Author(s):

A. Mikkelsen ◽

B. Sanyal ◽

J. Sadowski ◽

L. Ouattara ◽

J. Kanski ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Defect Structure ◽

Microscopy Study ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Scanning Tunneling Microscopy Study

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Cross-Sectional Scanning Tunneling Microscopy Study of Interfacial Roughness in an InGaAs/InP Multiple Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.1548 ◽

2003 ◽

Vol 42 (Part 1, No. 4A) ◽

pp. 1548-1551 ◽

Author(s):

Ichirou Yamakawa ◽

Takeshi Yamauchi ◽

Ryo Oga ◽

Yasufumi Fujiwara ◽

Yoshikazu Takeda ◽

...

Keyword(s):

Quantum Well ◽

Scanning Tunneling Microscopy ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Microscopy Study ◽

Scanning Tunneling ◽

Multiple Quantum ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Scanning Tunneling Microscopy Study

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A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

Journal of Applied Physics ◽

10.1063/1.2245195 ◽

2006 ◽

Vol 100 (4) ◽

pp. 044320 ◽

Author(s):

L. Ouattara ◽

A. Mikkelsen ◽

E. Lundgren ◽

L. Höglund ◽

C. Asplund ◽

...

Keyword(s):

Quantum Dot ◽

Scanning Tunneling Microscopy ◽

Microscopy Study ◽

Scanning Tunneling ◽

Infrared Photodetector ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Quantum Dot Infrared Photodetector ◽

Scanning Tunneling Microscopy Study

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A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures

Springer Proceedings in Physics - Microscopy of Semiconducting Materials ◽

10.1007/3-540-31915-8_102 ◽

2006 ◽

pp. 479-482

Author(s):

R Timm ◽

A Lenz ◽

J Grabowski ◽

H Eisele ◽

M Dähne

Keyword(s):

Scanning Tunneling Microscopy ◽

Microscopy Study ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Scanning Tunneling Microscopy Study

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A cross-sectional scanning tunneling microscopy study of IrO2 rutile single crystals

Surface Science ◽

10.1016/j.susc.2007.04.227 ◽

2007 ◽

Vol 601 (12) ◽

pp. L69-L72 ◽

Author(s):

Woei Wu Pai ◽

T.Y. Wu ◽

C.H. Lin ◽

B.X. Wang ◽

Y.S. Huang ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Single Crystals ◽

Microscopy Study ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Scanning Tunneling Microscopy Study

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In–NandN–Ncorrelation inInxGa1−xAs1−yNy∕GaAsquasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study

Physical Review B ◽

10.1103/physrevb.72.075311 ◽

2005 ◽

Vol 72 (7) ◽

Author(s):

R. Duca ◽

G. Ceballos ◽

C. Nacci ◽

D. Furlanetto ◽

P. Finetti ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Quantum Wells ◽

Microscopy Study ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional ◽

Lattice Matched ◽

Scanning Tunneling Microscopy Study

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